|
|
PDF AOP611 Data sheet ( Hoja de datos )
| Número de pieza | AOP611 | |
| Descripción | Complementary Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AOP611 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
AOP611
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP611 uses advanced trench
technology MOSFETs to provide excellen
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard Product AOP611
is Pb-free (meets ROHS & Sony 259
specifications). AOP611L is a Green
Product ordering option. AOP611 and
AOP611L are electrically identical.
Features
n-channel
VDS (V) = 40V
ID = 6.5A (VGS=10V)
RDS(ON)
< 35mΩ (VGS=10V)
< 47mΩ (VGS=4.5V)
p-channel
-40V
-5.5A (VGS = -10V)
RDS(ON)
< 52mΩ (VGS = -10V)
< 80mΩ (VGS = -4.5V)
ESD rating: 3000V (HBM)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D2 D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
G2 G1
S2
S1
PDIP-8
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain CurrentB
ID
IDM
6.5
5.3
30
TA=25°C
Power Dissipation TA=70°C
Avalanche CurrentB
Repetitive avalanche energy 0.3mHB
PD
IAR
EAR
2.5
1.6
13
25
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
p-channel
Max p-channel
-40
±20
-5.5
-4.4
-25
2.5
1.6
17
43
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-AmbientA
Maximum Junction-to-AmbientA
t ≤ 10s
Steady-State
Maximum Junction-to-LeadC
Steady-State
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
37 50 °C/W
74 90 °C/W
28 40 °C/W
35 50 °C/W
73 90 °C/W
32 40 °C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AOP611
www.DataSheet4U.com
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-32V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-5.5A
VGS=-4.5V, ID=-4.4A
Forward Transconductance
VDS=-5V, ID=-5.5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
-40
-1
-25
-1
-5
±150
-2 -3
43
60
65
11
-0.76
52
72
80
-1
-3.5
V
µA
µA
V
A
mΩ
mΩ
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1006
152
77
11
16.5
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs Gate Source Charge
VGS=-10V, VDS=-20V, ID=-5.5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-20V, RL=3.6Ω,
tD(off)
Turn-Off DelayTime
RGEN=3Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-5.5A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=100A/µs
17.4
8.8
3.3
4.5
9.7
6.3
35.5
26
22
15.9
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
Rev 0: October 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOP611.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AOP610 | Complementary Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
| AOP611 | Complementary Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |