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38N30 の電気的特性と機能

38N30のメーカーはFairchild Semiconductorです、この部品の機能は「 FQA38N30」です。


製品の詳細 ( Datasheet PDF )

部品番号 38N30
部品説明 FQA38N30
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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38N30 Datasheet, 38N30 PDF,ピン配置, 機能
FQA38N30
N-Channel QFET® MOSFET
300 V, 38.4 A, 85 mΩ
Features
• 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID =
19.2 A
• Low Gate Charge (Typ. 90 nC)
• Low Crss (Typ. 70 pF)
• 100% Avalanche Tested
• RoHS compliant
August 2014
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switch mode power supply, power factor correction,
electronic lamp ballast based on half bridge.
D
G
DS
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G
S
FQA38N30
300
38.4
24.3
153.6
± 30
1500
38.4
29
4.5
290
2.33
-55 to +150
300
Typ.
--
0.24
--
Max.
0.43
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor Corporation
FQA38N30 Rev. C0
1
www.fairchildsemi.com

1 Page





38N30 pdf, ピン配列
Typical Characteristics
102 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
100
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.30
0.25
0.20 VGS = 10V
0.15 VGS = 20V
0.10
0.05
0.00
0
Note : TJ = 25
50 100 150
ID , Drain Current [A]
200
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
7000
6000
5000
4000
3000
2000
1000
0
10-1
Ciss
C
oss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101
150
100
10-1
2
25
-55
Notes :
1. VDS = 50V
2. 250μ s Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
102
101
100
15025
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
10-1
0.4
0.8 1.2 1.6 2.0
VSD , Source-Drain Voltage [V]
2.4
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
VDS = 60V
10 VDS = 150V
8 VDS = 240V
6
4
2
Note : ID = 38.4 A
0
0 20 40 60 80 100
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor Corporation
FQA38N30 Rev. C0
3
www.fairchildsemi.com


3Pages


38N30 電子部品, 半導体
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2000 Fairchild Semiconductor Corporation
FQA38N30 Rev. C0
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
38N30

FQA38N30

Fairchild Semiconductor
Fairchild Semiconductor


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