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FM120-NのメーカーはPACELEADER INDUSTRIALです、この部品の機能は「(FM120-N - FM1100-N) CHIIIP SCHOTTKY BARRIIIER RECTIIIFIIIER」です。 |
部品番号 | FM120-N |
| |
部品説明 | (FM120-N - FM1100-N) CHIIIP SCHOTTKY BARRIIIER RECTIIIFIIIER | ||
メーカ | PACELEADER INDUSTRIAL | ||
ロゴ | |||
このページの下部にプレビューとFM120-Nダウンロード(pdfファイル)リンクがあります。 Total 3 pages
FM120-N THRU FM1100-N
CHIP SCHOTTKY BARRIER RECTIFIER
1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V
SOD-323
0.106 (2.7)
0.091 (2.3)
0.012(0.3) Typ.
0.057 (1.45)
0.041 (1.05)
0.016(0.4) Typ.
0.047 (1.2)
0.031 (0.8)
0.016(0.4) Typ.
FEATURES
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Very tiny plastic SMD package.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
MECHANICAL DATA
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-323
• Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.008 gram
MAXIMUM RATING (AT TA=25oC unless otherwise noted)
www.DataSheet4U.com
PARAMETER
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
See Fig.1
CONDITIONS
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25 OC
VR = VRRM TA = 125 OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN.
IO
IFSM
TYP.
MAX. UNIT
1.0 A
30 A
IR
RèJA
CJ
TSTG
0.5
mA
10
90 OC/W
120 pF
-65 +175 OC
SYMBOLS
FM120-N
FM130-N
FM140-N
FM150-N
FM160-N
FM180-N
FM1100-N
V
R
*
RM
1
(V)
20
30
40
50
60
80
100
V
*
RMS
2
(V)
14
21
28
35
42
56
70
V
*
R
3
(V)
20
30
40
50
60
80
100
V
*
F
4
(V)
0.55
0.70
0.85
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
www.paceleader.tw
1
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
1 Page FM120-N THRU FM1100-N
CHIP SCHOTTKY BARRIER RECTIFIER
Pinning information
Pin
Pin1 cathode
Pin2 anode
Simplified outline
12
Symbol
1
2
Marking
Type number
FM120-N
FM130-N
FM140-N
FM150-N
FM160-N
FM180-N
FM1100-N
Marking code
12
13
14
15
16
18
10
Suggested solder pad layout
C
www.DataSheet4U.com
A
B
Dimensions in inches and (millimeters)
PACKAGE
SOD-323
A
0.059 (1.50)
B
0.039 (1.00)
C
0.051 (1.30)
www.paceleader.tw
3
3Pages | |||
ページ | 合計 : 3 ページ | ||
|
PDF ダウンロード | [ FM120-N データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FM120-M | Silicon epitaxial planer type | Formosa MS |
FM120-MH | (FM120-MH - FM1100-MH) Chip Schottky Barrier Diodes | Formosa MS |
FM120-N | (FM120-N - FM1100-N) CHIIIP SCHOTTKY BARRIIIER RECTIIIFIIIER | PACELEADER INDUSTRIAL |
FM120-S | (FM120-S - FM1100-S) Chip Schottky Barrier Diodes | Formosa MS |