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J599 PDF Data sheet ( 特性 )

部品番号 J599
部品説明 2SJ599
メーカ NEC
ロゴ NEC ロゴ 



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J599 Datasheet, J599 PDF,ピン配置, 機能
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ599
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ599 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Low on-state resistance:
RDS(on)1 = 75 mMAX. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 111 mMAX. (VGS = –4.0 V, ID = –10 A)
Low Ciss: Ciss = 1300 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ599
TO-251
2SJ599-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
Gate to Source Voltage (VDS = 0 V)
VGSS
+20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
+20
+50
Total Power Dissipation (TC = 25°C) PT 35
Total Power Dissipation (TA = 25°C)
PT 1.0
Channel Temperature
www.DataSSthoereatg4Ue .Tcoemmperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tch 150
Tstg –55 to +150
IAS –20
EAS 40
V
V
A
A
W
W
°C
°C
A
mJ
(TO-251)
(TO-252)
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, RG = 25 , VGS = –20 V ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14644EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP(K)
Printed in Japan
©
2000

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