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J599のメーカーはNECです、この部品の機能は「P-Channel MOSFET ( Transistor ) - 2SJ599」です。 |
部品番号 | J599 |
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部品説明 | P-Channel MOSFET ( Transistor ) - 2SJ599 | ||
メーカ | NEC | ||
ロゴ | |||
このページの下部にプレビューとJ599ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ599
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ599 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance:
RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A)
• Low Ciss: Ciss = 1300 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ599
TO-251
2SJ599-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
Gate to Source Voltage (VDS = 0 V)
VGSS
+20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
+20
+50
Total Power Dissipation (TC = 25°C) PT 35
Total Power Dissipation (TA = 25°C)
PT 1.0
Channel Temperature
www.DataSSthoereatg4Ue .Tcoemmperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tch 150
Tstg –55 to +150
IAS –20
EAS 40
V
V
A
A
W
W
°C
°C
A
mJ
(TO-251)
(TO-252)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = –20 V ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14644EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP(K)
Printed in Japan
©
2000
1 Page PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
2SJ599
6.5±0.2
5.0±0.2
4
123
1.1±0.2
2.3±0.2
0.5±0.1
2.3 2.3
0.5-+00..12
0.5-+00..12
1.Gate
2.Drain
3.Source
4.Fin (Drain)
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
123
1.1±0.2
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection Source
Diode
www.DataSheet4U.com
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Preliminary Data Sheet D14644EJ1V0DS
3
3Pages | |||
ページ | 合計 : 4 ページ | ||
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部品番号 | 部品説明 | メーカ |
J598 | P-Channel MOSFET ( Transistor ) - 2SJ598 | NEC |
J599 | P-Channel MOSFET ( Transistor ) - 2SJ599 | NEC |