DataSheet.jp

IKW25N120T2 の電気的特性と機能

IKW25N120T2のメーカーはInfineon Technologiesです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IKW25N120T2
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 




このページの下部にプレビューとIKW25N120T2ダウンロード(pdfファイル)リンクがあります。

Total 15 pages

No Preview Available !

IKW25N120T2 Datasheet, IKW25N120T2 PDF,ピン配置, 機能
IKW25N120T2
TrenchStop® 2nd generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop®
with soft, fast recovery anti-parallel Emitter Controlled Diode
C
Short circuit withstand time 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® 2nd generation for 1200 V applications offers :
G
E
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Easy paralleling capability due to positive temperature coefficient
in VCE(sat)
Low EMI
PG-TO-247-3
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE Diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW25N120T2 1200V 25A
1.7V
175C K25T1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current (Tj=150°C)
TC = 25C
TC = 110C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 175C
Diode forward current (Tj=150°C)
TC = 25C
TC = 110C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 600V, Tj, start 175C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Wavesoldering only, temperature on leads only
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
50
25
100
100
40
25
100
20
10
349
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.2 12.06.2013

1 Page





IKW25N120T2 pdf, ピン配列
IKW25N120T2
TrenchStop® 2nd generation Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=25A
VGE=15V
VGE=15V,tSC10s
VCC = 600V,
Tj,start = 25C
Tj,start = 175C
-
-
-
-
-
-
1600
155
90
120
13
150
115
- pF
-
-
- nC
- nH
-A
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=600V,IC=25A,
VGE=0/15V,
RG=16.4,
L2)=105nH,
C2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25C,
VR=600V, IF=25A,
diF/dt=1050A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
27
20
265
95
1.55
1.35
2.9
195
2.05
20
475
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
µC
A
- A/s
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
3
Rev. 2.2 12.06.2013


3Pages


IKW25N120T2 電子部品, 半導体
IKW25N120T2
TrenchStop® 2nd generation Series
100A
20V
80A
VGE=17V
15V
60A 13V
11V
9V
40A
7V
20A
100A
20V
80A
VGE=17V
15V
60A 13V
11V
9V
40A
7V
20A
0A
0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
0A
0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
80A
70A
60A
50A
40A
30A
20A
10A
0A
0V
TJ=175°C
25°C
2V 4V 6V
8V 10V 12V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
3.5V
3.0V
2.5V
I =50A
C
2.0V
1.5V
1.0V
0.5V
I =25A
C
I =12.5A
C
IC= 3A
0.0V
0°C
50°C
100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
IFAG IPC TD VLS
6
Rev. 2.2 12.06.2013

6 Page



ページ 合計 : 15 ページ
 
PDF
ダウンロード
[ IKW25N120T2 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IKW25N120T2

IGBT ( Insulated Gate Bipolar Transistor )

Infineon Technologies
Infineon Technologies


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap