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2508DX の電気的特性と機能

2508DXのメーカーはNXP Semiconductorsです、この部品の機能は「 BU2508DX」です。


製品の詳細 ( Datasheet PDF )

部品番号 2508DX
部品説明 BU2508DX
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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2508DX Datasheet, 2508DX PDF,ピン配置, 機能
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 4.5 A; IB = 1.12 A
IF = 4.5 A
ICsat = 4.5 A; IB(end) = 1.1 A
TYP.
-
-
-
-
-
-
4.5
1.6
0.4
MAX.
1500
700
8
15
45
1.0
-
2.0
0.6
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN DESCRIPTION
1 base
case
c
2 collector
3 emitter
case isolated
123
b
Rbe
e
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LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
700
8
15
4
6
100
5
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
1 Turn-off current.
July 1998
1
Rev 2.500

1 Page





2508DX pdf, ピン配列
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508DX
TRANSISTOR
IC DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.1. 16kHz Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
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t
- IBM
Fig.2. Switching times definitions.
+ 150 v nominal
adjust for ICsat
1mH
IBend
-VBB
D.U.T.
LB
12nF
Rbe
Fig.3. 16kHz Switching times test circuit.
100 h FE
10
Tj = 25 C
Tj = 125 C
BU2508DF
5V
1V
1
0.01
0.1
IC / A
1
10
Fig.4. Typical DC current gain. hFE = f (IC)
parameter VCE
VBESAT / V
1.2
1.1 Tj = 25 C
Tj = 125 C
1
BU2508DF
0.9
0.8 IC/IB=
0.7 3
4
0.6
5
0.5
0.4
0.1
1
IC / A
10
Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
VCESAT / V
1
0.9
0.8
0.7
0.6
IC/IB=
5
4
3
BU2508DF
0.5
Tj = 25 C
0.4 Tj = 125 C
0.3
0.2
0.1
0
0.1
1
IC / A
10
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
July 1998
3 Rev 2.500


3Pages


2508DX 電子部品, 半導体
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508DX
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.88 g
16.0 max
0.7
5.8 max
3.0
4.5
27
max
22.5
max
10.0
25.1
25.7
5.1
3.3
25
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2.2 max
18.1
min
4.5
1.1
0.4 M
2
5.45 5.45
3.3
0.95 max
Fig.15. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
6 Rev 2.500

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
2508DF

BU2508DF

NXP Semiconductors
NXP Semiconductors
2508DX

BU2508DX

NXP Semiconductors
NXP Semiconductors


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