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G40N60C3 の電気的特性と機能

G40N60C3のメーカーはFairchild Semiconductorです、この部品の機能は「HGTG40N60C3」です。


製品の詳細 ( Datasheet PDF )

部品番号 G40N60C3
部品説明 HGTG40N60C3
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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G40N60C3 Datasheet, G40N60C3 PDF,ピン配置, 機能
Data Sheet
HGTG40N60C3
December 2001
75A, 600V, UFS Series N-Channel IGBT
The HGTG40N60C3 is a MOS gated high voltage switching
device combining the best features of a MOSFET and a
bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
Formerly developmental type TA49273.
Ordering Information
PART NUMBER
PACKAGE
PKG. NO.
HGTG40N60C3
TO-247
G40N60C3
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 75A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 100ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
G
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E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B

1 Page





G40N60C3 pdf, ピン配列
HGTG40N60C3
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3
L = 1mH
Test Circuit (Figure 17)
- 41
-
ns
- 30
-
ns
- 360 450 ns
- 100 210 ns
- 860
-
µJ
Turn-On Energy (Note 3)
EON2
- 2.0 2.4 mJ
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
EOFF
RθJC
- 2.5 4
mJ
-
-
0.43
oC/W
NOTES:
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 17.
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
80
70
60
PACKAGE
50 LIMIT
40
VGE = 15V
30
20
10
0
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75 100 125
TC, CASE TEMPERATURE (oC)
150
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
TJ = 150oC, RG = 3, L = 1mH, VCE = 480V
100
TC VGE
75oC 15V
75oC 10V
110oC 15V
110oC 10V
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.43oC/W, SEE NOTES
1
2 5 10
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
80
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
225 TJ = 150oC, RG = 3, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
20
VCE = 360V, RG = 3, TJ = 125oC
16
750
ISC
625
12 500
8 375
tSC
4 250
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B


3Pages


G40N60C3 電子部品, 半導体
HGTG40N60C3
Typical Performance Curves Unless Otherwise Specified (Continued)
100
0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
PD
10-3
10-2
t1, RECTANGULAR PULSE DURATION (s)
t1
10-1
t2
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
100
L = 1mH
RHRP3060
RG = 3
+
VDD = 480V
-
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FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
VGE
VCE
ICE
90%
EOFF
10%
EON2
90%
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 18. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B

6 Page



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部品番号部品説明メーカ
G40N60C3

HGTG40N60C3

Fairchild Semiconductor
Fairchild Semiconductor


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