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Número de pieza | IRHNB7Z60 | |
Descripción | RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
Fabricantes | International Rectifier | |
Logotipo | ||
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RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-3)
IRHNB7Z60
30V, N-CHANNEL
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHNB7Z60
IRHNB3Z60
IRHNB4Z60
IRHNB8Z60
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
0.009Ω
0.009Ω
0.009Ω
0.009Ω
75*A
75*A
75*A
75*A
SMD-3
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
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Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
75*
75* A
300
300 W
2.4 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
±20
500
75
30
0.35
-55 to 150
300 ( for 5 sec.)
3.3 (Typical )
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
*Current is limited by internal wire diameter
www.irf.com
1
12/18/01
1 page Pre-Irradiation
IRHNB7Z60
15000
12000
9000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Coss
Crss = Cgd
Coss = Cds + Cgd
Ciss
6000
Crss
3000
0
1 10 100
VDS , Drain-to-Source Voltage (V)
20 ID = 75A
16
12
VDS = 24V
VDS = 15V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 100 200 300 400
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
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100
TJ = 25 ° C
TJ = 150° C
10
VGS = 0 V
1
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VSD ,Source-to-Drain Voltage (V)
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100us
100
1ms
TC = 25°C
TJ = 150 °C
10ms
Single Pulse
10
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRHNB7Z60.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRHNB7Z60 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT | International Rectifier |
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