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PDF IRHNB7064 Data sheet ( Hoja de datos )
| Número de pieza | IRHNB7064 | |
| Descripción | RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
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Hay una vista previa y un enlace de descarga de IRHNB7064 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD - 91737A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-3)
IRHNB7064
60V, N-CHANNEL
RAD Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHNA7064 100K Rads (Si) 0.015Ω 75*A
IRHNA3064 300K Rads (Si) 0.015Ω 75*A
IRHNA4064 600K Rads (Si) 0.015Ω 75*A
IRHNA8064 1000K Rads (Si) 0.015Ω 75*A
SMD-3
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
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Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
75*
56 A
300
300 W
2.4 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
±20
500
75*
30
2.5
-55 to 150
300 ( for 5 sec.)
3.5 (Typical )
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
*Current is limited by pin diameter
www.irf.com
1
12/12/01
1 page  
Pre-Irradiation
IRHNB7064
10000
8000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
6000
4000
Ciss
Coss
2000
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 735AA
16
12
VDS = 48V
VDS = 30V
VDS = 12V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 50 100 150 200 250
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
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100
TJ = 25 ° C
TJ = 150° C
10
VGS = 0 V
1
0.0 1.0 2.0 3.0 4.0 5.0
VSD ,Source-to-Drain Voltage (V)
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100 100us
1ms
10 10ms
TC = 25°C
TJ = 150° C
Single Pulse
1
1 10
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHNB7064.PDF ] | |
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