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1N5831 の電気的特性と機能

1N5831のメーカーはNainaです、この部品の機能は「Schottky Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N5831
部品説明 Schottky Diode
メーカ Naina
ロゴ Naina ロゴ 




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1N5831 Datasheet, 1N5831 PDF,ピン配置, 機能
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I
I
I
IN 5831
I
I
.....
-......
NAINA
I
I
I 25 AMPERE
I 40 VOLTS
I SwitchmodePowerRectifier.
7"
I employing the Schottky Barrier principle in a large area melal-to-siJicon
diode. State-of-the-art geometry features epitaxial construction with osid
I passivation and metal overlap contact. ideally suited for use as rectifiers in
voltage, high-frequency inverters, free whelling diodes, and polarity protl
diodes.
. Extremely Low V.
. Low Stored Charge, Majority
Low Power LossIHigh
Efficiency
Carrier Conduction
High Surge Capacity
.Mectmical Charactelistics :
Case WelOed steel, hermetically seated
. Finish: All External Surtaces Corrosion Resistant and Terminal
Lead is Readily Soklerable
(C *CA
NS NSR
Solder Heat : The excellent heat transfer property of the heavy duty coppe'
anode terminal which transmits heat away from the die requires that caution
.used when attaching wires.
Stud Torque: 15 Ib-in max
11AIF
1
--J
MAXIMUM RATINGS
Ratings
Peak Repetitive Reverse Voltage
Symbol
VRRM
1N5831
40
UNIT
Volts
Working Peak Reverse Voltage
VRWM
PC Blooking Voltage
VR
Nonrepetitive Peak Reverse Voltage
VRSM
48 Volts
Average Rectified Forward Current
10 25 Amps
VR(equiv)~0.2 VR(dc~T_c=85oC
www.DataSheet4U.com
Ambient Temperature Rated VR(dc~PF(Avr 0, RaJ..=3.5oC1W
Nonrepetitive Peak Surge Current
90
800 Amps
(surge applied at rated load conditions, halfwave,
for one cycle
single phase, 60 Hz)
Operating and Storage Junction Temperature Range
TJ,T,og
-65 TO +125
oC
(Reverse voltage applied)
Peak Operating Junction Temperature (Forward
150 oC
Current Applied)
THERMAL CHARACTERISTICS
Characteristics
S bol
Max
Thermal Resistance, Junction to case
Re.x:
1.75 °CIW
ELECTRICAL CHARACTERISTICS
c =25oCunless otherwise noted
! Maximum Instantaneous Forward VOltage<1)(1.=10 Amps)
V.
( 1.=25 Amps»
I (1.=78.5 Amps)
I Maximum Instantaneous Reverse Current @
I Rated de VOltage<1)(1) (Tc=100oC
0.38 Volts
0.48
0.82
20 ma
150
II
I
I
IL________________________________________
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
1N5830

25 Amp Schottky Rectifier

Microsemi Corporation
Microsemi Corporation
1N5830

25 Amp Schottky Barrier Rectifier 20 to 35 Volts

Micro Commercial Components
Micro Commercial Components
1N5830

(1N5829 - 1N5831R) Schottky Power Diode

Naina Semiconductor
Naina Semiconductor
1N5830

(1N5829 - 1N5831R) Silicon Power Schottky Diode

America Semiconductor
America Semiconductor


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