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PDF SG50N06D2S Data sheet ( Hoja de datos )
| Número de pieza | SG50N06D2S | |
| Descripción | (SG50N06D2S / SG50N06D3S) Discrete IGBTs | |
| Fabricantes | Sirectifier Semiconductors | |
| Logotipo |  |
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SG50N06D2S, SG50N06D3S
Discrete IGBTs
SG50N06D2S
SG50N06D3S
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Min. Max.
31.50
7.80
31.88
8.20
4.09 4.29
4.09 4.29
4.09
14.91
4.29
15.11
30.12
37.80
30.30
38.20
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94 4.42
4.72 4.85
24.59
-0.05
25.07
0.1
3.30
0.780
4.57
0.830
Inches
Min. Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.489
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
0.130
19.81
0.180
21.08
Symbol
Test Conditions
VCES
VCGR
TJ=25oC to 150oC
TJ=25oC to 150oC; RGE=1M
VGES
Continuous
VGEM
IC25
IC90
ICM
SSOA
Transient
TC=25oC
TC=90oC
TC=25oC; 1 ms
VGE=15V; TVJ=125oC; RG=10
(RBSOA)
PC
Clamped inductive load; L=30uH
TC=25oC
VRRM
IFAVM
TC=70oC; rectangular; d=50%
IFRM tp 10ms; pulse width limited by TJ
PD TC=25oC
Maximum lead temperature for soldering
www.Dat1aS.6hemetm4U.(c0o.m062 in.) from case for 10 s
TJ
TJM
Tstg
Md Mounting torque
Terminal connection torque(M4)
W eight
Symbol
Test Conditions
BVCES
VGE(th)
ICES
IGES
VCE(sat)
IC=250uA; VGE=0V
IC=250uA; VCE=VGE
VCE=0.8VCES; TJ=25oC
VGE=0V;
TJ=125oC
VCE=0V; VGE=±20V
IC=IC90; VGE=15V
Maximum Ratings
600
600
±20
±30
75
50
200
ICM=100
@ 0.8VCES
250
600
60
600
150
300
Unit
V
V
A
A
W
V
A
A
W
oC
-40…+150
150
-40…+150
1.5/13
1.5/13
30
A
Nm/Ib.in.
g
(TJ=25oC, unless otherwise specified)
Characteristic Values
min. typ. max.
Unit
600 V
2.5 5.0 V
200 uA
1 mA
±100
nA
2.5 V
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SG50N06D2S.PDF ] | |
Hoja de datos destacado
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