Datasheet 2N6107 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2N6107	COMPLEMENTARY SILICON POWER TRANSISTORS 2N6107 2N6109 2N6111 PNP 2N6288 2N6290 2N6292 NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for gen	Central Semiconductor	transistor
2	2N6107	PLASTIC POWER TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS 2N6107 PNP 2N6292 NPN TO-220 Plastic Package General Purpose Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Base Voltage	CDIL	transistor
3	2N6107	HIGH SPEED MEDIUM POWER COMPLEMENTARY PAIR TRANSISTORS 2N6107 2N6292 MECHANICAL DATA Dimensions in mm 2.74 15.11 8.76 10.29 5.14 3.61 Dia. 1.26 6.35 4.57 1 23 13.51 HIGH SPEED MEDIUM POWER COMPLEMENTARY PAIR TRANSISTORS FEATURES • Silicon Planar Epitaxial Base Transistors • Medium Power Switching • Linear Applications 2.54 Pin 1 – Bas	Semelab	transistor
4	2N6107	PNP Epitaxial Silicon Transistor PNP Epitaxial Silicon Transistor FEATURES z DC Curent Gain Specified to 7A. z Collector-Emitter Sustaining Voltage. z High Current Gain. Pb Lead-free Production specification 2N6107 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value	Galaxy Microelectronics	transistor
5	2N6107	POWER TRANSISTORS(7A/40W) A A A A	Mospec Semiconductor	transistor

2N6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2N60	N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60 2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact	Unisonic Technologies	mosfet
2	2N60-E	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60-E 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.	Unisonic Technologies	mosfet
3	2N6008	Series 2N Transistors	Sprague	transistor
4	2N6009	Series 2N Transistors	Sprague	transistor
5	2N6010	Silicon Transistors	Semiconductor	transistor
6	2N6027	SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte	Central Semiconductor	transistor
7	2N6027	Programmable Unijunction Transistor 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge	ON Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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