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K3114 PDF Data sheet ( 特性 )

部品番号 K3114
部品説明 2SK3114
メーカ NEC
ロゴ NEC ロゴ 


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K3114 Datasheet, K3114 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3114
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3114 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3114
Isolated TO-220
FEATURES
Low on-state resistance:
RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.0 A)
Low gate charge:
QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A)
Gate voltage rating: ±30 V
Avalanche capability ratings
Isolated TO-220 package
5 (Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±4.0
±16
A
A
Total Power Dissipation (TC = 25°C) PT1 30 W
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Total Power Dissipation (TA = 25°C) PT2 2.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
–55 to +150
°C
IAS 4.0 A
EAS 10.7 mJ
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13337EJ2V0DS00 (2nd edition)
Date Published January 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1998

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