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Número de pieza | MP4TD0910 | |
Descripción | Silicon Bipolar MMIC Cascadable Amplifier | |
Fabricantes | M-pulse Microwave | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MP4TD0910 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0910
Features
• Cascadable 50Ω Gain Block
• 3dB Bandwidth: DC to 5.0 GHz
• 7.5 dB Typical Gain @ 1.0 GHz
• Input & Output SWR: <1.9 from 0.1 to 3.0 GHz
• Hermetic Gold-Ceramic Microstrip Package
• Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0910 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
stripline package. The MP4TD0910 is designed for use
where a general purpose broad band (4.5 GHz) 50Ω
gain block is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial
and military applications.
The MP4TD0910 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
12
Gold-Ceramic Microstrip Package Outline1,2
.040
1,02
4 GND
RF INPUT
1
RF OUT
AND BIAS
3
.020
0,51
.004 ±.002
0,1±0,05
2 GND
.100
2,54
.030
0,76
.495 ±.030
12,57 ±0,76
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
10 Id=35mA
Pin Configuration
8
Pin Number
Pin Description
6 1 RF Input
4
2&4
AC/DC Ground
3 RF Output and DC Bias
2
www.D0ataSheet4U.com
0.1
1
FREQUENCY (GHz)
10 Ordering Information
Model No.
Package
MP4TD0910
Ceramic
MP4TD0910T
Tape and Reel
Electrical Specifications @ TA = +25°C, Id = 35 mA, Z0 = 50Ω
Symbol Parameters
Test Conditions
Gp
ΔGp
Power Gain (⏐S21⏐2)
Gain Flatness
f = 0.1 GHz
f = 0.1 to 3.0 GHz
f3dB 3 dB Bandwidth
-
SWRin Input SWR
f = 0.1 to 3.0 GHz
SWRout Output SWR
f = 0.1 to 2.0 GHz
P1dB Output Power @ 1 dB Gain Compression
f = 1.0 GHz
NF 50 Ω Noise Figure
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
-
dV/dT Device Voltage Temperature Coefficient
-
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
7.0
-
-
-
-
-
-
-
-
7.0
-
Typ.
7.5
±0.5
5.0
1.9
1.8
11.5
6.0
23.0
100
7.8
-16.0
Max.
9.0
±0.7
-
-
-
-
-
-
-
8.6
-
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
PH (408) 432-1480 FX (408) 432-3440
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MP4TD0910.PDF ] |
Número de pieza | Descripción | Fabricantes |
MP4TD0910 | Silicon Bipolar MMIC Cascadable Amplifier | M-pulse Microwave |
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