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Número de pieza | MP4TD0310 | |
Descripción | Silicon Bipolar MMIC Cascadable Amplifier | |
Fabricantes | M-pulse Microwave | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MP4TD0310 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
• Cascadable 50Ω Gain Block
• 3dB Bandwidth: DC to 2.0 GHz
• 12.1 dB Typical Gain @ 1.0 GHz
• Unconditionally Stable (k>1)
• Hermetic Gold-Ceramic Microstrip Package
• Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0310 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package. The MP4TD0310 is designed for use where a
general purpose 50Ω gain block is required. Typical
applications include narrow and wide band IF and RF
amplifiers in industrial and military applications.
The MP4TD0310 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
14
Id=35mA
12
10
8
6
4
2
0
0.01
www.DataSheet4U.com
0.1 1
FREQUENCY (GHZ)
10
MP4TD0310
Gold-Ceramic Microstrip Package Outline1,2
.040
1,02
4 GND
RF INPUT
1
RF OUT
AND BIAS
3
.020
0,51
.004 ±.002
0,1±0,05
2 GND
.100
2,54
.035
0,89
.495 ±.030
12,57 ±0,76
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
Pin Configuration
Pin Number
Pin Description
1 RF Input
2&4
AC/DC Ground
3 RF Output and DC Bias
Ordering Information
Model No.
Package
MP4TD0310
Hermetic Ceramic
Electrical Specifications @ TA = +25°C, Id = 35 mA, Z0 = 50Ω
Symbol
Parameters
Test Conditions
Gp Power Gain (⏐S21⏐2)
ΔGp Gain Flatness
f = 0.1 GHz
f = 0.1 to 1.5 GHz
f3dB 3 dB Bandwidth
-
SWRin Input SWR
f = 0.1 to 3.0 GHz
SWRout Output SWR
f = 0.1 to 3.0 GHz
P1dB Output Power @ 1dB Gain Compression f = 1.0 GHz
NF 50 Ω Noise Figure
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
Vd Device Voltage
f = 1.0 GHz
-
dV/dT Device Voltage Temperature Coefficient
-
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
11.5
-
-
-
-
-
-
-
-
4.5
-
Typ.
13.0
+ 0.8
2.0
1.9
1.6
10.0
5.7
23.0
125
5.0
-8.0
Max.
14.0
+ 1.1
-
-
-
-
-
-
-
6.0
-
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
North America: Tel. (408) 432-1480
Fax (408) 432-3440
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MP4TD0310.PDF ] |
Número de pieza | Descripción | Fabricantes |
MP4TD0310 | Silicon Bipolar MMIC Cascadable Amplifier | M-pulse Microwave |
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