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IRFZ46ZL PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFZ46ZL
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFZ46ZL Datasheet, IRFZ46ZL PDF,ピン配置, 機能
PD - 94769
AUTOMOTIVE MOSFET
IRFZ46Z
IRFZ46ZS
Features
O Advanced Process Technology
O Ultra Low On-Resistance
IRFZ46ZL
HEXFET® Power MOSFET
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
D
VDSS = 55V
O Repetitive Avalanche Allowed up to Tjmax
Description
G
RDS(on) = 13.6m
Specifically designed for Automotive applica-
tions, this HEXFET® Power MOSFET utilizes the
latest processing techniques to achieve extremely
S ID = 51A
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
Absolute Maximum Ratings
TO-220AB
IRFZ46Z
D2Pak
IRFZ46ZS
TO-262
IRFZ46ZL
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
cPulsed Drain Current
51
36
200
A
PD @TC = 25°C Maximum Power Dissipation
82 W
VGS
EAS
EAS (tested)
IAR
EAR
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
0.54
± 20
63
97
See Fig.12a,12b,15,16
W/°C
V
mJ
A
mJ
TJ Operating Junction and
-55 to + 175
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
jRθJA Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
–––
0.50
–––
–––
1.84
–––
62
40
°C/W
www.irf.com
1
09/12/03

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