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UGF8JT の電気的特性と機能

UGF8JTのメーカーはVishay Siliconixです、この部品の機能は「High Voltage Ultrafast Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 UGF8JT
部品説明 High Voltage Ultrafast Rectifier
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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UGF8JT Datasheet, UGF8JT PDF,ピン配置, 機能
UG(F,B)8HT & UG(F,B)8JT
Vishay General Semiconductor
High Voltage Ultrafast Rectifier
TO-220AC
ITO-220AC
UG8xT
PIN 1
PIN 2
2
1
CASE
TO-263AB
K
UGF8xT
PIN 1
PIN 2
2
1
UGB8xT
PIN 1
1
2
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
tfr
www.DataSheet4U.comVF
TJ max.
8A
500 V, 600 V
100 A
25 ns
500 ns
1.5 V
150 °C
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high voltage and high frequency power
factor correction application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRWM
VRMS
VDC
IF(AV)
IFSM
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminals to heatsink t = 1 min
TJ, TSTG
VAC
UG8HT
UG8JT
500 600
400 480
350 420
500 600
8.0
100
- 55 to + 150
1500
UNIT
V
V
V
V
A
A
°C
V
Document Number: 88767 For technical questions within your region, please contact one of the following:
Revision: 12-Nov-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1

1 Page





UGF8JT pdf, ピン配列
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
UG8, UGB8
6
UG8F
4
2
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
1000
TJ = TJ max.
8.3 ms Single Half Sine-Wave
UG(F,B)8HT & UG(F,B)8JT
Vishay General Semiconductor
10 000
1000
100
TJ = 125 °C
TJ = 100 °C
10
TJ = 25 °C
1
0 20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
100 10
10
www.DataSheet4U1.com
10
Number of Cycles at 60 Hz
100
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
1
0.1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance
100
10
1
0.1
0.01
0.5
TJ = 25 °C max.
Pulse Width = 300 µs
1 % Duty Cycle
1.0 1.5 2.0 2.5
Instantaneous Forward Voltage (V)
3.0
Figure 3. Typical Instantaneous Forward Characteristics
350
Qrr
300 Trr
IF = 8.0 A
Vr = 30 V
250
200
240 A/µs
150
100
50
0
25
50 A/µs
60 A/µs
50 A/µs
60 A/µs
240 A/µs
50 75 100 125
Junction Capacitance (°C)
150
Figure 6. Reverse Switching Characteristics
Document Number: 88767 For technical questions within your region, please contact one of the following:
Revision: 12-Nov-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3


3Pages





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