DataSheet.jp

H40N03E の電気的特性と機能

H40N03EのメーカーはHi-Sincerity Mocroelectronicsです、この部品の機能は「N-Channel Enhancement-Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 H40N03E
部品説明 N-Channel Enhancement-Mode MOSFET
メーカ Hi-Sincerity Mocroelectronics
ロゴ Hi-Sincerity Mocroelectronics ロゴ 




このページの下部にプレビューとH40N03Eダウンロード(pdfファイル)リンクがあります。
Total 5 pages

No Preview Available !

H40N03E Datasheet, H40N03E PDF,ピン配置, 機能
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200517
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 1/5
H40N03E
N-Channel Enhancement-Mode MOSFET (25V, 40A)
Features
RDS(on)=16m@VGS=10V, ID=20A
RDS(on)=25m@VGS=4.5V, ID=20A
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for DC/DC Converters and Motor Drivers
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
H40N03E Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
Internal Schematic
Diagram
G
D
S
Maximum Ratings & Thermal Characteristics
(TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *1
Maximum Power Dissipation @ TC=25oC
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
ID=35A, VDD=20V, L=0.14mH
www.JDuantacStihoene-tto4U-C.caosme Thermal Resistance
Junction-to-Ambient Thermal Resistance(PCB mounted)*2
*1: Maximum DC current limited by the package.
*2: 1-in2 2oz Cu PCB board
VDS
VGS
ID
IDM
PD
TJ,Tstg
EAS
RθJC
RθJA
Value
25
±20
40
160
50
-55 to 150
300
2.1
55
Units
V
V
A
A
W
oC
mJ
OC/W
OC/W
Switching
Test Circuit
VDD
VGEN
VIN
RG G
D
S
VOUT
Switching
Waveforms
td(on)
ton
tr td(off)
90%
toff
tf
90 %
Output, VOUT
Input, VIN 10%
10%
10%
Inverted
90%
50% 50%
Pulse Width
H40N03E
HSMC Product Specification

1 Page





H40N03E pdf, ピン配列
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200517
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 3/5
80
60
40
20
0
0
Fig.1 Output Characteristic
VGS=5.0V,6.0V,10.0V
4.5V
4.0V
3.5V
3.0V
1 23 4
VDS, Drain-to-Source Voltage (V)
5
Fig.2 Transfer Characteristic
60
VDS=10V
40
20
0
2
25oC
TJ=125oC
-55oC
2.5 3 3.5 4 4.5
VGS, Gate-to-Source Voltage (V)
5
Fig.3 On Resistance & Drain Current
60
55
50
45
40
35
30 VGS=4.5V
25
www.DataS20heet4U.com
15
VGS=10.0V
10
0
20 40 60
ID - Drain Current (A)
80
Fig.5 On Resistance & Junction Temperature
1.6
VGS=10V
ID=30A
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature (oC)
H40N03E
Fig.4 On Resistance & Gate to Source Voltage
80
ID=20A
70
60
50
40
30 125oC
20
10 TJ =25oC
0
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
3000
2500
Ciss
Fig.6 Capacitance
f=1MHz
VGS=0V
2000
1500
1000
500
0
0
Coss, Crss
5 10 15 20
VDS, Drain-to-Source Voltage (V)
25
HSMC Product Specification


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ H40N03E データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
H40N03E

N-Channel Enhancement-Mode MOSFET

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap