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Datasheet H40N03E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | H40N03E | N-Channel Enhancement-Mode MOSFET HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200517 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5
H40N03E
N-Channel Enhancement-Mode MOSFET (25V, 40A)
H40N03E Pin Assignment
Tab
Features
• RDS(on)=16mΩ@VGS=10V, ID=20A • RDS(on)=25mΩ@VGS=4.5V, ID=20A • Advanced |  Hi-Sincerity Mocroelectronics | mosfet |
H40 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | H4001 | READ-ONLY CONTACTLESS IDENTIFICATION DEVICE
®
EM MICROELECTRONIC-MARIN SA READ-ONLY CONTACTLESS IDENTIFICATION DEVICE
Features
64 bit memory array laser programmable Wide dynamic range due to on chip buffer capacitance & voltage limiter on chip. Full wave rectifier on chip Big modulation depth due to a low impedance mod  EM Microelectronic data | | |
| 2 | H4005 | ISO 11 784 / 11 785 COMPLIANT READ ONLY CONTACTLESS IDENTIFICATION DEVICE EM MICROELECTRONIC-MARIN SA
H4005
ISO 11'784 / 11'785 COMPLIANT READ ONLY CONTACTLESS IDENTIFICATION DEVICE
Features
• • • • • • • • • • • • 128 bit memory array laser programmable Bit duration : 32 periods of RF field Bit coding according to ISO FDX-B On chip resonnance ca  ETC data | | |
| 3 | H4006 | Read Only Contactless Identification Device
EM MICROELECTRONIC-MARIN SA
H4006
13.56 MHz 64 Data bit Read Only Contactless Identification Device
Features
n n n n n n n n n n Operating frequency range 10 MHz to 15 MHz RF interface optimized for 13.56 MHz operation Laser programmed memory array (64 data bit + 16 CRC bit) M EM Microelectronic data | | |
| 4 | H4083 | Charge amplifier Hamamatsu Corporation amplifier | | |
| 5 | H40N03E | N-Channel Enhancement-Mode MOSFET HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200517 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5
H40N03E
N-Channel Enhancement-Mode MOSFET (25V, 40A)
H40N03E Pin Assignment
Tab
Features
• RDS(on)=16mΩ@VGS=10V, ID=20A • RDS(on)=25mΩ@VGS=4.5V, ID=20A • Advanced Hi-Sincerity Mocroelectronics mosfet | | |
| 6 | H40RF60 | IGBT, Insulated Gate Bipolar Transistor IGBT
ReverseconductingIGBT
IHW40N60RF
InductiveHeatingSeries
Datasheet
IndustrialPowerControl
IHW40N60RF
IH-series
ReverseconductingIGBT
Features: •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationso  Infineon Technologies igbt | | |
| 7 | H40T120 | IGBT, Insulated Gate Bipolar Transistor IHW40T120
Soft Switching Series
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C
• • •
• • • • •
Short circuit withstand time – 10µs Designed for : - Soft Switching Applications - Induction Heating TrenchS  Infineon igbt | |
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