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SPP42N03S2L-13 の電気的特性と機能

SPP42N03S2L-13のメーカーはInfineon Technologies AGです、この部品の機能は「OptiMOS Power-Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 SPP42N03S2L-13
部品説明 OptiMOS Power-Transistor
メーカ Infineon Technologies AG
ロゴ Infineon Technologies AG ロゴ 




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SPP42N03S2L-13 Datasheet, SPP42N03S2L-13 PDF,ピン配置, 機能
OptiMOS® Power-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
P-TO262-3-1
• Avalanche rated
• dv /dt rated
SPI42N03S2L-13
SPP42N03S2L-13 SPB42N03S2L-13
Product Summary
V DS
R DS(on),max
ID
30 V
12.9 m
42 A
P-TO263-3-2
P-TO220-3-1
Type
SPP42N03S2L-13
SPB42N03S2L-13
SPI42N03S2L-13
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4034
Q67042-S4035
Q67042-S4104
Marking
2N03L13
2N03L13
2N03L13
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
www.DataSheet4U.com
Continuous drain current1)
I D T C=25 °C
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C
Avalanche energy, single pulse
Repetitive avalanche energy
E AS
E AR
I D=42 A, R GS=25
limited by T jmax 2)
Reverse diode dv /dt
dv /dt
I D=42 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
42
42
248
110
8
6
±20
83
-55 ... 175
55/175/56
Unit
A
mJ
mJ
kV/µs
V
W
°C
Rev. 2.0
page 1
2004-06-04

1 Page





SPP42N03S2L-13 pdf, ピン配列
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
www.DatDaSiohdeeet4pUu.clsoemcurrent
Diode forward voltage
Reverse recovery time
Reverse recovery charge
SPI42N03S2L-13
SPP42N03S2L-13 SPB42N03S2L-13
Symbol Conditions
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=21 A, R G=7.8
-
-
-
-
-
-
-
850 1130 pF
330 440
90 130
6.5 9.8 ns
12 18
24 36
14.5 21.8
Q gs
Q gd
Qg
V plateau
V DD=24 V, I D=21 A,
V GS=0 to 10 V
- 2.7 3.6 nC
- 7.9 11.9
- 22.9 30.5
- 3.5 - V
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=42 A,
T j=25 °C
t rr
V R=15 V, I F=I S,
di F/dt =100 A/µs
Q rr
- - 42 A
- - 248
- 0.95 1.25 V
- 24 31 ns
- 18 23 nC
Rev. 2.0
page 3
2004-06-04


3Pages


SPP42N03S2L-13 電子部品, 半導体
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=21 A; V GS=10 V
30
SPI42N03S2L-13
SPP42N03S2L-13 SPB42N03S2L-13
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
2.5
25
20
15 98 %
typ
10
5
2
800 µA
1.5
37 µA
1
0.5
0
-60 -20 20
60 100 140 180
T j [°C]
0
-60 -20 20 60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
www.DataSh1e0e01t04004U.com
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
1000
25°C 98%
1010003
Ciss
Coss
100
175 °C
25 °C
175°C 98%
Crss
110002
10
10
0
5 10 15 20 25 30
V DS [V]
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V SD [V]
Rev. 2.0
page 6
2004-06-04

6 Page



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部品番号部品説明メーカ
SPP42N03S2L-13

OptiMOS Power-Transistor

Infineon Technologies AG
Infineon Technologies AG


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