DataSheet.jp

FGA70N30TD の電気的特性と機能

FGA70N30TDのメーカーはFairchild Semiconductorです、この部品の機能は「70A PDP IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGA70N30TD
部品説明 70A PDP IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




このページの下部にプレビューとFGA70N30TDダウンロード(pdfファイル)リンクがあります。

Total 9 pages

No Preview Available !

FGA70N30TD Datasheet, FGA70N30TD PDF,ピン配置, 機能
FGA70N30TD
300V, 70A PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.5V @ IC = 40A
• High input impedance
• Fast switching
• RoHS complaint
Application
. PDP System
December 2007
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series
of trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
C
GCE
TO-3P
Absolute Maximum Ratings
G
E
Symbol
Description
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
IC pulse(1)*
Pulsed Collector Current
www.DataSheet4U.com
IF Diode Continuous Forward Current
IFM Diode Maximum Forward Current
Maximum Power Dissipation
PD Maximum Power Dissipation
@ TC = 25oC
@ TC = 100°C
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
Maximum Lead Temp. for soldering
TL Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT) Thermal Resistance, Junction-to-Case
RθJC(DIODE) Thermal Resistance, Junction-to-Case for Diode
RθJA
Thermal Resistance, Junction-to-Ambient
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.2
* Ic_pluse limited by max Tj
Ratings
300
±30
160
10
40
201
90.6
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.62
1.56
40
©2006 Fairchild Semiconductor Corporation
FGA70N30TD Rev. A
1
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
www.fairchildsemi.com

1 Page





FGA70N30TD pdf, ピン配列
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 10A
TC = 25°C
TC = 125°C
trr Diode Reverse Recovery Time
TC = 25°C
IF = 10A
TC = 125°C
Irr
Diode Peak Reverse Recovery Cur- dI/dt = 200A/µs
TC = 25°C
rent Diode Forward Voltage TC = 125°C
Qrr Diode Reverse Recovery Charge
TC = 25°C
TC = 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.1
0.9
21
35
2.8
5.6
29.4
98
Max.
1.4
--
--
--
--
--
--
--
Units
V
ns
A
nC
www.DataSheet4U.com
FGA70N30TD Rev. A
3
www.fairchildsemi.com


3Pages


FGA70N30TD 電子部品, 半導体
Typical Performance Characteristics (Continued)
Figure 13. Turn-on Characteristics vs.
Collector Current
500
Common Emitter
VGE = 15V, RG = 15
TC = 25oC
TC = 125oC
tr
100
td(on)
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 15
TC = 25oC
TC = 125oC
tf
td(off)
tf
10
0 20 40 60 80 100
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
2000
1000
Eoff
100
0
20 40 60 80
Collector Current, IC [A]
100
Figure 16. Switching Loss vs. Collector Current
10000
1000
Common Emitter
VGE = 15V, RG = 15
TC = 25oC
TC = 125oC
100 Eon
10
www.DataSheet4U.0com
Common Emitter
VCC = 200V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
20 40 60 80
Gate Resistance, RG []
100
100
Eon
Eoff
10
0
20 40 60 80
Collector Current, IC [A]
Figure 17. Transient Thermal Impedance of IGBT
1
100
0.5
0.1 0.2
0.1
0.05
0.01
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
PDM
t1
t2
1
10
FGA70N30TD Rev. A
6
www.fairchildsemi.com

6 Page



ページ 合計 : 9 ページ
 
PDF
ダウンロード
[ FGA70N30TD データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
FGA70N30T

70A PDP IGBT

Fairchild Semiconductor
Fairchild Semiconductor
FGA70N30TD

70A PDP IGBT

Fairchild Semiconductor
Fairchild Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap