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ST3406 の電気的特性と機能

ST3406のメーカーはStanson Technologyです、この部品の機能は「N Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 ST3406
部品説明 N Channel Enhancement Mode MOSFET
メーカ Stanson Technology
ロゴ Stanson Technology ロゴ 




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ST3406 Datasheet, ST3406 PDF,ピン配置, 機能
ST3406
N Channel Enhancement Mode MOSFET
5.4A
DESCRIPTION
ST3406 is the N-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer power
management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
1
S
2
FEATURE
z 30V/5.4A, RDS(ON) = 26mΩ(Typ.)
@VGS = 10V
z 30V/4.6A, RDS(ON) = 36mΩ
@VGS = 4.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
www.DataSheet4U.com
3
A6YA
12
Y: Year Code A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3406S23RG
SOT-23-3L
A6YA
Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
ST3406S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1

1 Page





ST3406 pdf, ピン配列
ST3406
N Channel Enhancement Mode MOSFET
5.4A
ELECTRICAL CHARACTERISTICS ( Ta = 25Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain
Current
IDSS
On-State Drain Current
ID(on)
Drain-source On-Resistance
RDS(on)
Forward Transconductance
gfs
Diode Forward Voltage
Dynamic
Total Gate Charge
www.DataShGeeat4tUe.-coSmource Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
Turn-Off Time
td(off)
tf
VGS=0V,ID=-250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=55
VDS5V,VGS=4.5V
VGS=10V,ID=4.0A
VGS=4.5V,ID=3.6A
VDS=4.5V,ID=5.4A
IS=1.7A,VGS=0V
VDS=15V
VGS=10V
ID6.7A
VDS=15V
VGS=0V
F=1MHz
VDD=15V
RL=15Ω
ID=1.0A
VGEN=10V
RG=6Ω
30 V
1.0 3.0 V
±100
1
nA
10 uA
10 A
26
36
33
41
mΩ
12 S
0.8 1.2 V
10 18
1.6
3.1
450
240
38
7 15
10 20
20 40
11 20
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1


3Pages


ST3406 電子部品, 半導体
SOT-23-3L PACKAGE OUTLINE
ST3406
N Channel Enhancement Mode MOSFET
5.4A
www.DataSheet4U.com
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1

6 Page



ページ 合計 : 6 ページ
 
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[ ST3406 データシート.PDF ]


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共有リンク

Link :


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