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FDMS7680 の電気的特性と機能

FDMS7680のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDMS7680
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDMS7680 Datasheet, FDMS7680 PDF,ピン配置, 機能
FDMS7680
N-Channel PowerTrench® MOSFET
30 V, 6.9 m
Features
General Description
April 2009
„ Max rDS(on) = 6.9 mat VGS = 10 V, ID = 14 A
„ Max rDS(on) = 11 mat VGS = 4.5 V, ID = 11 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced body diode technology, engineered
for soft recovery.
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
„ IMVP Vcore Switching for Notebook
„ VRM Vcore Switching for Desktop and Server
„ OringFET / Load Switch
„ DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Power 56
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheet4U.com
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
+/-20
28
53
14
80
29
33
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDMS7680
Device
FDMS7680
Package
Power 56
(Note 1a)
3.7
50
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMS7680 Rev.C
1
www.fairchildsemi.com

1 Page





FDMS7680 pdf, ピン配列
Typical Characteristics TJ = 25 °C unless otherwise noted
80
VGS = 10 V
60 VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
40
20
0
0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
12
VDS, DRAIN TO SOURCE VOLTAGE (V)
3
Figure 1. On Region Characteristics
8
7
VGS = 3 V
6
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
5
VGS = 3.5 V
4
3 VGS = 4 V
2
1
VGS = 4.5 V VGS = 10 V
0
0 20 40 60 80
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
1.5 ID = 14 A
VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
www.DataSheet4U.coFmigure 3. Normalized On Resistance
vs Junction Temperature
25
PULSE DURATION = 80 µs
ID = 14 A DUTY CYCLE = 0.5% MAX
20
15
10 TJ = 125 oC
5
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
80
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
60
VDS = 5 V
40
TJ = 150 oC
TJ = 25 oC
20
TJ = -55 oC
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
100
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.01
0.2
TJ = -55 oC
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDMS7680 Rev.C
3
www.fairchildsemi.com


3Pages


FDMS7680 電子部品, 半導体
Dimensional Outline and Pad Layout
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDMS7680 Rev.C
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDMS7680

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FDMS7682

MOSFET ( Transistor )

Fairchild Semiconductor
Fairchild Semiconductor


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