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FDMS7676 の電気的特性と機能

FDMS7676のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDMS7676
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDMS7676 Datasheet, FDMS7676 PDF,ピン配置, 機能
July 2009
FDMS7676
N-Channel PowerTrench® MOSFET
30 V, 5.5 m:
Features
General Description
„ Max rDS(on) = 5.5 m: at VGS = 10 V, ID = 19 A
„ Max rDS(on) = 7.6 m: at VGS = 4.5 V, ID = 15 A
„ Advanced Package and Silicon design for low rDS(on) and high
efficiency
„ Next generation enhanced body diode technology, engineered
for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ IMVP Vcore Switching for Notebook
„ VRM Vcore Switching for Desktop and Server
„ OringFET / Load Switch
„ DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
Power 56
D
D
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheet4U.com
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
28
76
16
90
72
48
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.6
50
°C/W
Device Marking
FDMS7676
Device
FDMS7676
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7676 RevA
1
www.fairchildsemi.com

1 Page





FDMS7676 pdf, ピン配列
Typical Characteristics TJ = 25 °C unless otherwise noted
90
VGS = 10 V
VGS = 5 V
VGS = 4 V
60
PULSE DURATION = 80 Ps
VGS = 4.5 V DUTY CYCLE = 0.5% MAX
30
VGS = 3.5 V
0
0.0 0.5 1.0 1.5 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
6
5
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
4
VGS = 4 V
3
2 VGS = 4.5 V
1
VGS = 5 V
VGS = 10 V
0
0 30 60 90
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 19 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
www.DataSheet4U.coFmigure 3. Normalized On Resistance
vs Junction Temperature
16
PULSE DURATION = 80 Ps
ID = 19 A DUTY CYCLE = 0.5% MAX
12
8
TJ = 125 oC
4
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
90
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
VDS = 5 V
60
30
0
0
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
1234
VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 5. Transfer Characteristics
100
VGS = 0 V
10
1 TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS7676 Rev. A 
3 www.fairchildsemi.com


3Pages


FDMS7676 電子部品, 半導体
Dimensional Outline and Pad Layout
www.DataSheet4U.com
FDMS7676 Rev. A
6 www.fairchildsemi.com

6 Page



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共有リンク

Link :


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