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FDMS7670 の電気的特性と機能

FDMS7670のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDMS7670
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDMS7670 Datasheet, FDMS7670 PDF,ピン配置, 機能
April 2009
FDMS7670
N-Channel PowerTrench® MOSFET
30 V, 3.8 m
Features
„ Max rDS(on) = 3.8 mat VGS = 10 V, ID = 21 A
„ Max rDS(on) = 5.0 mat VGS = 4.5 V, ID = 17 A
„ Advanced Package and Silicon design for low rDS(on) and high
efficiency
„ Next generation enhanced body diode technology, engineered
for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ IMVP Vcore Switching for Notebook
„ VRM Vcore Switching for Desktop and Server
„ OringFET / Load Switch
„ DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
D5
D6
D7
D8
4G
3S
2S
1S
www.DataSMheeOt4SU.FcoEmT Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
42
105
21
150
144
62
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.0
50
°C/W
Device Marking
FDMS7670
Device
FDMS7670
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7670 Rev.D
1
www.fairchildsemi.com

1 Page





FDMS7670 pdf, ピン配列
Typical Characteristics TJ = 25 °C unless otherwise noted
150
VGS = 10 V
120
VGS = 5 V
VGS = 4.5 V
VGS = 4 V
90
60
30
0
0.0
VGS = 3.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 1. On Region Characteristics
5
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
4
VGS = 3.5 V
VGS = 4 V
3
2 VGS = 4.5 V
1
VGS = 5 V
VGS = 10 V
0
0 30 60 90 120 150
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 21 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
www.DataSheet4U.coFmigure 3. Normalized On Resistance
vs Junction Temperature
15
ID = 21 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
12
9
6
TJ = 125 oC
3
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
150
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
120
VDS = 5 V
90
TJ = 150 oC
60
30
0
1
TJ = 25 oC
TJ = -55 oC
234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
500
100 VGS = 0 V
10
1
0.1
0.01
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS7670 Rev.D
3 www.fairchildsemi.com


3Pages


FDMS7670 電子部品, 半導体
Dimensional Outline and Pad Layout
www.DataSheet4U.com
FDMS7670 Rev.D
6 www.fairchildsemi.com

6 Page



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共有リンク

Link :


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