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FDMS7656AS の電気的特性と機能

FDMS7656ASのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDMS7656AS
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDMS7656AS Datasheet, FDMS7656AS PDF,ピン配置, 機能
FDMS7656AS
N-Channel PowerTrench® SyncFET
30 V, 49 A, 1.8 m
September 2009
Features
General Description
„ Max rDS(on) = 1.8 mat VGS = 10 V, ID = 30 A
„ Max rDS(on) = 1.9 mat VGS = 7 V, ID = 27 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
The FDMS7656AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Top Bottom
Pin 1
S D5
4G
S
S
G
D6
3S
D
D
DD
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheet4U.com
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
dv/dt
MOSFET dv/dt
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
49
194
31
180
1.3
242
96
2.5
-55 to +150
Units
V
V
A
V/ns
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.3
50
°C/W
Device Marking
FDMS7656AS
Device
FDMS7656AS
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7656AS Rev.C
1
www.fairchildsemi.com

1 Page





FDMS7656AS pdf, ピン配列
Typical Characteristics TJ = 25 °C unless otherwise noted
180
150 VGS = 10 V
VGS = 4.5 V
120 VGS = 4 V
VGS = 3.5 V
VGS = 3 V
90
60
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
30
0
0.0 0.5 1.0 1.5 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
6
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
5
VGS = 3 V
4
3
VGS = 3.5 V
2 VGS = 4 V
1
VGS = 4.5 V
VGS = 10 V
0
0 30 60 90 120 150 180
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.5
ID = 30 A
1.4 VGS = 10 V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
www.DataSheet4U.coFmigure 3. Normalized On Resistance
vs Junction Temperature
6
ID = 30 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
4
TJ = 125 oC
2
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
180
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
150
VDS = 5 V
120
TJ = 125 oC
90
60
30
TJ = 25 oC
TJ = -55 oC
0
123
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics
200
100 VGS = 0 V
10
TJ = 125 oC
1
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.0
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS7656AS Rev.C
3 www.fairchildsemi.com


3Pages


FDMS7656AS 電子部品, 半導体
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS7656AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
30
30
25
di/dt = 300 A/µs
20
15
10
5
0
-5
0 50 100 150 200 250
TIME (ns)
Figure 14. FDMS7656AS SyncFET body
diode reverse recovery characteristic
10-2
TJ = 125 oC
10-3 TJ = 100 oC
10-4
TJ = 25 oC
10-5
0
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
www.DataSheet4U.com
FDMS7656AS Rev.C
6 www.fairchildsemi.com

6 Page



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部品番号部品説明メーカ
FDMS7656AS

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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