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FDMA3023PZ の電気的特性と機能

FDMA3023PZのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDMA3023PZ
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDMA3023PZ Datasheet, FDMA3023PZ PDF,ピン配置, 機能
FDMA3023PZ
Dual P-Channel PowerTrench® MOSFET
-30 V, -2.9 A, 90 m
December 2008
tm
Features
General Description
„ Max rDS(on) = 90 mat VGS = -4.5 V, ID = -2.9 A
„ Max rDS(on) = 130 mat VGS = -2.5 V, ID = -2.6 A
„ Max rDS(on) = 170 mat VGS = -1.8 V, ID = -1.7 A
„ Max rDS(on) = 240 mat VGS = -1.5 V, ID = -1.0 A
„ Low profile - 0.8 mm maximum - in the new package MicroFET
2x2 mm
„ HBM ESD protection level > 2 kV (Note 3)
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
„ RoHS Compliant
„ Free from halogenated compounds and antimony
oxides
PIN 1
S1 G1 D2
D1 D2
D1 G2 S2
MicroFET 2x2
S1 11
G1 22
D2 33
66 D1
55 G2
44 S2
www.DataSMheeOt4SU.FcoEmT Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-30
±8
-2.9
-6
1.4
0.7
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
RθJA
RθJA
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
69
151
°C/W
Device Marking
323
Device
FDMA3023PZ
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMA3023PZ Rev.B1
1
www.fairchildsemi.com

1 Page





FDMA3023PZ pdf, ピン配列
Notes:
1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
(a) RθJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
(b) RθJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
(c) RθJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
(d) RθJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.
a)86 oC/W when
mounted on a 1
in2 pad of 2 oz
copper.
b)173 oC/W when
mounted on a
minimum pad of 2
oz copper.
c)69 oC/W when
mounted on a 1 in2
pad of 2 oz copper.
d)151 oC/W when
mounted on a
minimum pad of 2 oz
copper.
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
www.DataSheet4U.com
©2008 Fairchild Semiconductor Corporation
FDMA3023PZ Rev.B1
3
www.fairchildsemi.com


3Pages


FDMA3023PZ 電子部品, 半導体
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.005
10-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
RθJA = 173 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
www.DataSheet4U.com
©2008 Fairchild Semiconductor Corporation
FDMA3023PZ Rev.B1
6
www.fairchildsemi.com

6 Page



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共有リンク

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部品番号部品説明メーカ
FDMA3023PZ

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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