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FDG410NZ の電気的特性と機能

FDG410NZのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDG410NZ
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDG410NZ Datasheet, FDG410NZ PDF,ピン配置, 機能
FDG410NZ
Single N-Channel PowerTrench® MOSFET
20 V, 2.2 A, 70 m
March 2009
Features
General Description
„ Max rDS(on) = 70 mat VGS = 4.5 V, ID = 2.2 A
„ Max rDS(on) = 77 mat VGS = 2.5 V, ID = 2.0 A
„ Max rDS(on) = 87 mat VGS = 1.8 V, ID = 1.8 A
„ Max rDS(on) = 115 mat VGS = 1.5 V, ID = 1.5 A
„ HBM ESD protection level > 2 kV (Note 3)
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability
„ Fast switching speed
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized use in small switching regulaters, providing an
extremely low rDS(on) and gate charge (Qg) in a small package.
Applications
„ DC/DC converter
„ Power management
„ Load switch
„ Low gate charge
„ RoHS Compliant
DS
D
D1
6D
G
D
D
D2
G3
5D
4S
www.DataSheet4U.com
SC70-6
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
2.2
6.0
0.42
0.38
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
300
333
°C/W
Device Marking
.41
Device
FDG410NZ
Package
SC70-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
1
www.fairchildsemi.com

1 Page





FDG410NZ pdf, ピン配列
Typical Characteristics TJ = 25 °C unless otherwise noted
6
VGS = 4.5 V
5
4
3
2
VGS = 3.5 V
VGS = 2.5 V
VGS = 1.8 V
VGS = 1.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
1
0
0 0.2 0.4 0.6 0.8 1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
2.5
VGS = 1.5 V
2.0
VGS = 1.8 V
1.5
VGS = 3.5 V VGS = 2.5 V
1.0
0.5
1
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
234
ID, DRAIN CURRENT (A)
VGS = 4.5 V
56
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 2.2 A
VGS = 4.5 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
www.DataSheet4U.coFmigure 3. Normalized On Resistance
vs Junction Temperature
6
PULSE DURATION = 80 µs
5 DUTY CYCLE = 0.5% MAX
VDS = 5 V
4
3
2
TJ = 125 oC
TJ = 25 oC
1
TJ = -55 oC
0
0.0 0.5 1.0 1.5 2.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
180
PULSE DURATION = 80 µs
160 DUTY CYCLE = 0.5% MAX
140 ID = 1.1 A
120
100
TJ = 125 oC
80
60 TJ = 25 oC
40
1.0
1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
4.5
6
VGS = 0 V
1
TJ = 125 oC
0.1
TJ = 25 oC
TJ = -55 oC
0.01
0.2
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
3
www.fairchildsemi.com


3Pages


FDG410NZ 電子部品, 半導体
Dimensional Outline and Pad Layout
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
6
www.fairchildsemi.com

6 Page



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部品番号部品説明メーカ
FDG410NZ

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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