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FDD6780A の電気的特性と機能

FDD6780AのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDD6780A
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDD6780A Datasheet, FDD6780A PDF,ピン配置, 機能
FDD6780A / FDU6780A_F071
N-Channel PowerTrench® MOSFET
January 2009
25 V, 8.6 m
Features
General Description
„ Max rDS(on) = 8.6 mat VGS = 10 V, ID = 16.4 A
„ Max rDS(on) = 19.0 mat VGS = 4.5 V, ID = 12.2 A
„ 100% UIL test
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Applications
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G
S
D-PAK
(TO-252)
D
GG
D
S
Short-Lead I-PAK
(TO-251AA)
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
30
48
16.4
100
24
32.6
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case TO-252, TO-251
Thermal Resistance, Junction to Ambient TO-252
Package Marking and Ordering Information
(Note 1a)
4.6
40
°C/W
Device Marking
FDD6780A
FDU6780A
Device
FDD6780A
FDU6780A_F071
Package
D-PAK (TO-252)
TO-251AA
Reel Size
13 ’’
N/A(Tube)
Tape Width
12 mm
N/A
Quantity
2500 units
75 units
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
1
www.fairchildsemi.com

1 Page





FDD6780A pdf, ピン配列
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96 °C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 7 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 13 A.
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
3
www.fairchildsemi.com


3Pages


FDD6780A 電子部品, 半導体
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC = 4.6 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
1
2
1
0.1
0.01
0.003
10-4
www.DataSheet4U.com
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
RθJA = 96 oC/W
(Note 1b)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
100
101
100
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
10
1000
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDD6780

N-Channel Power Trench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FDD6780A

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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