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FDB039N06 の電気的特性と機能

FDB039N06のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDB039N06
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDB039N06 Datasheet, FDB039N06 PDF,ピン配置, 機能
July 2009
FDB039N06
N-Channel PowerTrench® MOSFET
60V, 174A, 3.9m
Features
• RDS(on) = 2.95m( Typ.) @ VGS = 10V, ID = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
DD
GS
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
www.DataVSDhSeSet4U.com Drain to Source Voltage
VGSS
ID
Gate to Source Voltage
Drain Current
-Continuous (TC = 25oC, Silicion Limited)
-Continuous (TC = 100oC, Silicion Limited)
-Continuous (TC = 25oC, Package Limited)
IDM Drain Current
- Pulsed
(Note 1)
EAS Single Pulsed Avalanche Energy
(Note 2)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation
(TC = 25oC)
- Derate above 25oC
Ratings
60
±20
174*
123*
120
696
872
7.0
231
1.54
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.65
62.5
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDB039N06 Rev. A
1
www.fairchildsemi.com

1 Page





FDB039N06 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
1000
100
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
1
0.1
0.01
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
0.1 1
VDS,Drain-Source Voltage[V]
6
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.6
3.2 VGS = 10V
2.8
VGS = 20V
www.DataSheet4U.com
2.4
0
*Note: TC = 25oC
60 120 180 240 300 360
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
Ciss
1000
*Note:
1. VGS = 0V
2. f = 1MHz
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
100
0.1
1
10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
1000
*Notes:
1. VDS = 10V
2. 250µs Pulse Test
100
175oC
25oC
10
-55oC
1
2345678
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1000
175oC
100
25oC
10
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 12V
8 VDS = 30V
VDS = 48V
6
4
2
*Note: ID = 75A
0
0 20 40 60 80 100 120
Qg, Total Gate Charge [nC]
FDB039N06 Rev. A
3 www.fairchildsemi.com


3Pages


FDB039N06 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
D riv e r
RG
V GS
+
V DS
_
L
S am e T ype
as DUT
• d v /d t c o n tro lle d b y R G
• IS D c o n tro lle d b y p u ls e p e rio d
V DD
V GS
( D riv e r )
www.DataSheet4U.com
I SD
(DUT )
V DS
(DUT )
D = - -G- - a- -t-e- - -P- -u-l-s- e- - -W- - -i-d-t-h- -
G a te P u ls e P e rio d
10V
IFM , B o d y D io d e F o rw a rd C u rre n t
d i/d t
IR M
B o d y D io d e R e v e rs e C u rre n t
B o d y D io d e R e c o v e ry d v /d t
V SD
B o d y D io d e
F o rw a rd V o lta g e D ro p
V DD
FDB039N06 Rev. A
6 www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDB039N06

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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