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FDB029N06 の電気的特性と機能

FDB029N06のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel PowerTrench MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDB029N06
部品説明 N-Channel PowerTrench MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDB029N06 Datasheet, FDB029N06 PDF,ピン配置, 機能
June 2009
FDB029N06
N-Channel PowerTrench® MOSFET
60V, 193A, 3.1m
Features
• RDS(on) = 2.4m( Typ.)@ VGS = 10V, ID = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
D
D
GS
D2-PAK
FDB Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
Ratings
VDSS
Drain to Source Voltage
www.DataVSGhSeSet4U.com Gate to Source Voltage
ID Drain Current
-Continuous (TC = 25oC, Silicon Limited)
-Continuous (TC = 100oC, Silicon Limited)
-Continuous (TC = 25oC, Package Limited)
IDM Drain Current
- Pulsed
(Note 1)
EAS Single Pulsed Avalanche Energy
(Note 2)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation
(TC = 25oC)
- Derate above 25oC
60
±20
193*
136*
120
772
1434
6
231
1.54
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.65
62.5
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDB029N06 Rev. A
1
www.fairchildsemi.com

1 Page





FDB029N06 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
700
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100
10
0.1
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
1
VDS, Drain-Source Voltage[V]
5
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.5
3.0
VGS = 10V
2.5 VGS = 20V
www.DataSheet4U.com
2.0
0
*Note: TC = 25oC
70 140 210 280
ID, Drain Current [A]
350
Figure 5. Capacitance Characteristics
12000
9000
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
6000
3000
0
0.1
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
400
*Notes:
1. VDS = 10V
2. 250µs Pulse Test
100
150oC
-55oC
10 25oC
1
2468
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
400
100
150oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250µs Pulse Test
0.0 0.5 1.0 1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 15V
8 VDS = 30V
VDS = 48V
6
4
2
*Note: ID = 75A
0
0 20 40 60 80 100 120
Qg, Total Gate Charge [nC]
FDB029N06 Rev. A
3 www.fairchildsemi.com


3Pages


FDB029N06 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
D riv e r
RG
V GS
+
V DS
_
L
S am e T ype
as DUT
• d v /d t c o n tro lle d b y R G
• IS D c o n tro lle d b y p u ls e p e rio d
V DD
V GS
( D riv e r )
www.DataSheet4U.com
I SD
(DUT )
V DS
(DUT )
D = - -G- - a- -t-e- - -P- -u-l-s- e- - -W- - -i-d-t-h- -
G a te P u ls e P e rio d
10V
IFM , B o d y D io d e F o rw a rd C u rre n t
d i/d t
IR M
B o d y D io d e R e v e rs e C u rre n t
B o d y D io d e R e c o v e ry d v /d t
V SD
B o d y D io d e
F o rw a rd V o lta g e D ro p
V DD
FDB029N06 Rev. A
6 www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDB029N06

N-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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