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FDA032N08 の電気的特性と機能

FDA032N08のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel PowerTrench MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDA032N08
部品説明 N-Channel PowerTrench MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDA032N08 Datasheet, FDA032N08 PDF,ピン配置, 機能
January 2009
FDA032N08
N-Channel PowerTrench® MOSFET
75V, 235A, 3.2mΩ
tm
Features
• RDS(on) = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
D
G
G DS
TO-3PN
S
MOSFET
www.DataSheet4U.com
Maximum
Ratings
TC =
25oC
unless
otherwise
noted*
Symbol
Parameter
FDA032N08
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC, Silicon Limited)
-Continuous (TC = 100oC, Silicon Limited)
-Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
75
±20
235*
165*
120
940
1995
5.5
375
2.5
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
Ratings
0.4
0.24
40
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDA032N08 Rev. A
1
www.fairchildsemi.com

1 Page





FDA032N08 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
3000
1000
100
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
1
0.1
0.01
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
0.1
VDS,Drain-Source Voltage[V]
1
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.0030
0.0025
VGS = 10V
VGS = 20V
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0.0020
0
*Note: TC = 25oC
100 200 300
ID, Drain Current [A]
400
Figure 5. Capacitance Characteristics
100000
10000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
1000
Crss
100
0.1
1 10
VDS, Drain-Source Voltage [V]
80
FDA032N08 Rev. A
Figure 2. Transfer Characteristics
500
100
175oC
-55oC
25oC
10
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
2468
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
400
100
175oC
25oC
10
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.0 0.5 1.0 1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 15V
VDS = 37.5V
8 VDS = 60V
6
4
2
*Note: ID = 75A
0
0 50 100 150 200
Qg, Total Gate Charge [nC]
3 www.fairchildsemi.com


3Pages


FDA032N08 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
D riv e r
RG
V GS
+
V DS
_
L
Sam e Type
as DUT
• d v /d t c o n tro lle d b y R G
• IS D c o n tro lle d b y p u ls e p e rio d
V DD
V GS
( D riv e r )
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I SD
(DUT )
V DS
(DUT )
D
=
- -G- - a- -t-e- - -P- -u-l-s- e- - -W- - -i-d- t-h- -
G a te P u ls e P e rio d
10V
IFM , B o d y D io d e F o rw a rd C u rre n t
d i/d t
IR M
B o d y D io d e R e v e rs e C u rre n t
B o d y D io d e R e c o v e ry d v /d t
V SD
B o d y D io d e
F o rw a rd V o lta g e D ro p
V DD
FDA032N08 Rev. A
6 www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDA032N08

N-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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