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AP9971GM の電気的特性と機能

AP9971GMのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP9971GM
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP9971GM Datasheet, AP9971GM PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP9971GM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Single Drive Requirement
Surface Mount Package
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
60V
50mΩ
5A
D1 D2
G1 G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
www.DataSIDh@eetT4AU=.c1o0m0
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating
60
+25
5
3.2
30
2
0.016
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
1
200811042

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AP9971GM pdf, ピン配列
35
T A =25 o C
30
25
10V
6.0V
4.5V
20
15
10
V G =3.0V
5
0
01234
V DS , Drain-to-Source Voltage (V)
5
Fig 1. Typical Output Characteristics
55
I D =5A
50 T A =25 o C
45
40
35
30
1 2 3 4 5 6 7 8 9 10 11
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V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T j =150 o C
1
T j =25 o C
0.1
0.01
0.1
0.3 0.5 0.7 0.9 1.1 1.3
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
AP9971GM
35
30 T A =150 o C
25
10V
6.0V
4.5V
20
15
10 V G =3.0V
5
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =5A
V G =10V
2.0
1.6
1.2
0.8
0.4
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.8
150
2.4
2
1.6
1.2
0.8
0.4
-50
0
50 100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3


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共有リンク

Link :


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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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