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IGW60T120 の電気的特性と機能

IGW60T120のメーカーはInfineon Technologiesです、この部品の機能は「Low Loss IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IGW60T120
部品説明 Low Loss IGBT
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 




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IGW60T120 Datasheet, IGW60T120 PDF,ピン配置, 機能
TrenchStop® Series
IGW60T120
Low Loss IGBT in TrenchStop® and Fieldstop technology
Best in class TO247
Short circuit withstand time – 10µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IGW60T120 1200V 60A
1.7V
150°C G60T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 90°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
100
60
150
150
±20
10
375
-40...+150
-55...+150
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 Nov. 09

1 Page





IGW60T120 pdf, ピン配列
TrenchStop® Series
IGW60T120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=600V,IC=60A,
VGE=0/15V,
RG=10,
Lσ2)=180nH,
Cσ2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
50
44
480
80
4.3
5.2
9.5
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C
VCC=600V,IC=60A,
VGE=0/15V,
RG= 10,
Lσ2)=180nH,
Cσ2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
50
45
600
130
6.4
9.4
15.8
Unit
max.
- ns
-
-
-
- mJ
-
-
2) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.4 Nov. 09


3Pages


IGW60T120 電子部品, 半導体
TrenchStop® Series
IGW60T120
td(off)
tf
100ns
td(on)
tr
10ns
1000 ns td(off)
tf
100 ns
td(on)
tr
10 ns
1ns
20A 40A 60A 80A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=10,
Dynamic test circuit in Figure E)
1 ns
5Ω 15Ω 25Ω 35Ω 45Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=60A,
Dynamic test circuit in Figure E)
td(off)
100ns tf
td(on)
tr
10ns
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=60A, RG=10,
Dynamic test circuit in Figure E)
7V
6V
5V max.
typ.
4V
min.
3V
2V
1V
0V
-50°C
0°C
50°C
100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 2.0mA)
Power Semiconductors
6
Rev. 2.4 Nov. 09

6 Page



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部品番号部品説明メーカ
IGW60T120

Low Loss IGBT

Infineon Technologies
Infineon Technologies


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