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PDF IGW15T120 Data sheet ( Hoja de datos )
| Número de pieza | IGW15T120 | |
| Descripción | Low Loss IGBT | |
| Fabricantes | Infineon Technologies | |
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IGW15T120
^ TrenchStop Series
Low Loss IGBT in Trench and Fieldstop technology
• Approx. 1.0V reduced VCE(sat) compared to BUP313
C
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
G
E
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
IGW25T120
VCE
1200V
IC
15A
VCE(sat),Tj=25°C
1.7V
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
www.DaGtaaSthee-eet4mUi.tctoemr voltage
Short circuit withstand time1)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj,max
150°C
Package
TO-247AC
Ordering Code
Q67040-S4515
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Value
1200
30
15
45
45
±20
10
110
-40...+150
-55...+150
260
Unit
V
A
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Preliminary / Rev. 1 Jul-02
1 page  
IGW15T120
^ TrenchStop Series
40A
VGE=17V
30A 15V
13V
11V
20A 9V
7V
10A
0A
0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
40A
VGE=17V
30A 15V
13V
11V
20A 9V
7V
10A
0A
0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
40A
www.DataS3he5eAt4U.com
30A
25A
20A
15A
10A
TJ=150°C
5A 25°C
0A
0V 2V 4V 6V 8V 10V 12V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
3,0V
2,5V
IC=30A
2,0V
1,5V
1,0V
IC=15A
IC=8A
IC=5A
0,5V
0,0V
-50°C
0°C
50°C
100°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Preliminary / Rev. 1 Jul-02
5 Page 
IGW15T120
^ TrenchStop Series
Figure A. Definition of switching times
www.DataSheet4U.com
τr11
Tj (t)
p(t) r1
τ2
r2
r2
τrnn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Power Semiconductors
11
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
an d Stray capacity Cσ =39pF.
Preliminary / Rev. 1 Jul-02
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IGW15T120.PDF ] | |
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