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PDF IGW08T120 Data sheet ( Hoja de datos )
| Número de pieza | IGW08T120 | |
| Descripción | Low Loss IGBT | |
| Fabricantes | Infineon Technologies | |
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Hay una vista previa y un enlace de descarga de IGW08T120 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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Preliminary
TrenchStoP Series
IGW08T120
Low Loss IGBT in Trench and Fieldstop technology
• Approx. 1.0V reduced VCE(sat) compared to BUP305D
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
G
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
E
Type
VCE
IC VCE(sat),Tj=25°C
IGW08T120
1200V
8A
1.7V
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
www.DaVtaCSEh≤ee1t42U0.c0oVm, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj,max
150°C
Package
TO-247AC
Ordering Code
Q67040-S4513
Symbol
VCE
IC
ICpuls
-
IF
VGE
tSC
Ptot
Tj
Tstg
-
Value
1200
16
8
24
24
Unit
V
A
16
8
±20
10
70
-40...+150
-55...+150
260
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Preliminary / Rev. 1 Sep-03
1 page  
Preliminary
TrenchStoP Series
IGW08T120
20A
VGE=17V
15V
15A 13V
11V
10A 9V
7V
5A
0A
0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
20A
VGE=17V
15V
15A 13V
11V
10A 9V
7V
5A
0A
0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
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15A
10A
5A
TJ=150°C
25°C
0A
0V 2V 4V 6V 8V 10V 12V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
3,0V
2,5V
IC=15A
2,0V
1,5V
1,0V
IC=8A
IC=5A
IC=2.5A
0,5V
0,0V
-50°C
0°C
50°C
100°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Preliminary / Rev. 1 Sep-03
5 Page 
Preliminary
TrenchStoP Series
IGW08T120
Figure A. Definition of switching times
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τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Power Semiconductors
11
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
an d Stray capacity Cσ =39pF.
Preliminary / Rev. 1 Sep-03
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IGW08T120.PDF ] | |
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