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FDZ391P の電気的特性と機能

FDZ391PのメーカーはFairchild Semiconductorです、この部品の機能は「Thin WL-CSP MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDZ391P
部品説明 Thin WL-CSP MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDZ391P Datasheet, FDZ391P PDF,ピン配置, 機能
September 2008
FDZ391P
P-Channel 1.5 V PowerTrench® Thin WL-CSP MOSFET tm
-20 V, -3 A, 85 m
Features
General Description
„ Max rDS(on) = 85 mat VGS = -4.5 V, ID = -1 A
„ Max rDS(on) = 123 mat VGS = -2.5 V, ID = -1 A
„ Max rDS(on) = 200 mat VGS = -1.5 V, ID = -1 A
„ Occupies only 1.5 mm2 of PCB area
„ Ultra-thin package: less than 0.4 mm height when mounted
to PCB
„ RoHS Compliant
Designed on Fairchild's advanced 1.5 V PowerTrench process
with state of the art "low pitch" Thin WLCSP packaging process,
the FDZ391P minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rDS(on).
Applications
„ Battery management
„ Load switch
„ Battery protection
Pin 1
S
SG
DS
D
S
G
BOTTOM
TOP
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-3
-15
1.9
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
65
133
°C/W
Device Marking
6
Device
FDZ391P
Package
WL-CSP Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
www.DataSheet4U.com
©2008 Fairchild Semiconductor Corporation
FDZ391P Rev.B
1
www.fairchildsemi.com

1 Page





FDZ391P pdf, ピン配列
Typical Characteristics TJ = 25 °C unless otherwise noted
16
14
12 VGS = -2.0 V
10 VGS = -4.5 V
8 VGS = -3.5 V
VGS = -2.5 V
6
4 VGS = -1.5 V
2 PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
2.0
1.8 VGS = -1.5 V
PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX
1.6 VGS = -2.0 V
VGS = -2.5 V
1.4
VGS = -3.5 V
1.2
1.0
0.8
0
VGS = -4.5 V
2 4 6 8 10 12
-ID, DRAIN CURRENT(A)
14
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
16
1.5
ID = -1 A
1.4 VGS = -4.5 V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
240
ID = - 0.5 A
PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX
200
160
120 TJ = 125 oC
80
TJ = 25 oC
40
1234
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
5
15
PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX
12
VDD = -5 V
9
6
TJ = 125 oC
3 TJ = 25 oC
TJ = -55 oC
0
0.5 1.0 1.5 2.0 2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
60
VGS = 0 V
10
1
0.1
0.01
0.001
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
0.0001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
www.DataSheet4U.com
FDZ391P Rev.B
3 www.fairchildsemi.com


3Pages


FDZ391P 電子部品, 半導体
Dimensional Outline and Pad Layout
www.DataSheet4U.com
FDZ391P Rev.B
6 www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDZ391P

Thin WL-CSP MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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