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IRG4RC10KPBF の電気的特性と機能

IRG4RC10KPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTO」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4RC10KPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTO
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG4RC10KPBF Datasheet, IRG4RC10KPBF PDF,ピン配置, 機能
PD 95389
IRG4RC10KPbF
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UltraFast IGBT
Features
• Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides higher efficiency
than Generation 3
• Industry standard TO-252AA package
• Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
D-PAK
TO-252AA
Max.
600
9.0
5.0
18
18
10
± 20
34
38
15
-55 to + 150
300 (0.063 in. (1.6mm) from case )
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
Parameter
RθJC
RθJA
Wt
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
Typ.
–––
–––
0.3 (0.01)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
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Max.
3.3
50
–––
Units
°C/W
g (oz)
1
06/10/04

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IRG4RC10KPBF pdf, ピン配列
IRG4RC10KPbF
4
3
Square wave:
2 60%of rated
voltage
For both:
Duty cycle: 50%
TJ = 125°C
Tsink= 55°C
Gate drive as specified
Power Dissipation = 1.4W
1
Ideal diodes
0
0.1 1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Triangular wave:
Clamp voltage:
80%of rated
A
100
100 100
TJ = 25 °C
10
TJ = 150 °C
VGE = 15V
20µs PULSE WIDTH
1
1.0 2.0 3.0 4.0 5.0 6.0 7.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10
TJ = 150 °C
TJ = 25 °C
VCC = 50V
5µs PULSE WIDTH
1
5 10 15 20
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
5µs PULSE WIDTH
3


3Pages


IRG4RC10KPBF 電子部品, 半導体
IRG4RC10KPbF
1.2 RG = 1O0h0m
TJ = 150° C
VCC = 480V
1.0 VGE = 15V
0.8
0.6
0.4
0.2
2468
I C, Collector Current (A)
10
Fig. 11 - Typical Switching Losses vs.
Collector Current
100 VGE = 20V
T J = 125 oC
10
SAFE OPERATING AREA
1
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
L D.U.T.
VC *
50V
1000V
cd
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
0 - 480V
480µF
960V
RL =
4
480V
X IC@25°C
Fig. 13b - Pulsed Collector
Current Test Circuit
IC
L
Driver*
VC
D.U.T.
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
™Ã
d
* Driver same type
e as D.U.T., VC = 480V
6
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部品番号部品説明メーカ
IRG4RC10KPBF

INSULATED GATE BIPOLAR TRANSISTO

International Rectifier
International Rectifier


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