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IRG4RC10KDPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTO」です。 |
部品番号 | IRG4RC10KDPBF |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTO | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRG4RC10KDPBFダウンロード(pdfファイル)リンクがあります。 Total 12 pages
PD - 95035
IRG4RC10KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated
UltraFast IGBT
Features
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-252AA package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A
• Lead-Free
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• For hints see design tip 97003
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
600
9.0
5.0
18
18
4.0
16
10
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
V
A
µs
V
W
°C
Thermal Resistance
Parameter
RθJC
RθJC
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Typ.
–––
–––
–––
0.3 (0.01)
Max.
3.3
7.0
50
–––
Units
°C/W
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
www.DataSheet4U.com
1
2/20/04
1 Page 1.6
1.2
Square wave:
0.8
60% of rated
voltage
I
0.4
Ideal diodes
0.0
0.1
IRG4RC10KDPbF
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 5950°C
Gate drive as specified
Power Dissipation = 1.4W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100 100
TJ = 25 °C
10
TJ = 150 °C
VGE = 15V
20µs PULSE WIDTH
1
1.0 2.0 3.0 4.0 5.0 6.0 7.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
www.DataSheet4U.com
10
TJ = 150 °C
TJ = 25 °C
VCC = 50V
5µs PULSE WIDTH
1
5 10 15 20
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
3Pages IRG4RC10KDPbF
2.0 RG = O50hΩm
TJ = 150° C
VCC = 480V
VGE = 15V
1.5
1.0
0.5
0.0
0
2468
I C , Collector Current (A)
10
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
100
VTGJE
= 20V
= 125 oC
10
SAFE OPERATING AREA
1
1 10 100
VCE, Collector-to-Emitter Voltage (V)
1000
Fig. 12 - Turn-Off SOA
10 TJ = 150°C
TJ = 125°C
TJ = 25°C
1
6
www.DataSheet4U.com
0.1
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Forward Voltage Drop - V FM(V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
www.irf.com
6 Page | |||
ページ | 合計 : 12 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRG4RC10KDPBF | INSULATED GATE BIPOLAR TRANSISTO | International Rectifier |