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IRFB4615PBF の電気的特性と機能

IRFB4615PBFのメーカーはInternational Rectifierです、この部品の機能は「N-Channel HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB4615PBF
部品説明 N-Channel HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB4615PBF Datasheet, IRFB4615PBF PDF,ピン配置, 機能
PD -96171
IRFB4615PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET® Power MOSFET
D VDSS
150V
RDS(on) typ.
32m:
max. 39m:
S ID
35A
TO-220AB
IRFB4615PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
wwPwD.D@ataTSCh=ee2t45U°C.com Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
dSingle Pulse Avalanche Energy
cAvalanche Current
fRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
jJunction-to-Case
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
ijJunction-to-Ambient (PCB Mount)
www.irf.com
Max.
35
25
140
144
0.96
± 20
38
-55 to + 175
300
x x10lb in (1.1N m)
109
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
1.045
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
09/05/08

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IRFB4615PBF pdf, ピン配列
1000
100
10
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
1
0.1
0.01
0.1
5.0V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
TJ = 25°C
10
1
VDS = 50V
60µs PULSE WIDTH
0.1
2 4 6 8 10 12 14 16
www.DataSheet4U.com VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
1000
100
Ciss
Coss
Crss
10
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
IRFB4615PbF
1000
100
10
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
5.0V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.0
ID = 21A
2.5 VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
12.0
ID= 21A
10.0
8.0
VDS= 120V
VDS= 75V
VDS= 30V
6.0
4.0
2.0
0.0
0
5 10 15 20 25 30 35
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3


3Pages


IRFB4615PBF 電子部品, 半導体
IRFB4615PbF
6.0
5.5
5.0
4.5
4.0
3.5
3.0
ID = 100µA
ID = 250uA
2.5 ID = 1.0mA
ID = 1.0A
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
30
IF = 14A
25 VR = 100V
TJ = 25°C
20 TJ = 125°C
15
10
5
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
35
IF = 21A
30 VR = 100V
25
TJ = 25°C
TJ = 125°C
20
800
IF = 14A
700 VR = 100V
600
TJ = 25°C
TJ = 125°C
500
15 400
10 300
5
0
0 200 400 600 800 1000
www.DataSheet4U.com
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
200
100
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 19 - Typical Stored Charge vs. dif/dt
1000
900
800
700
IF = 21A
VR = 100V
TJ = 25°C
TJ = 125°C
600
500
400
300
200
100
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRFB4615PBF

N-Channel HEXFET Power MOSFET

International Rectifier
International Rectifier


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