PDF AS8NVLC512K32 Data sheet ( Hoja de datos )

Número de pieza	AS8NVLC512K32
Descripción	512K x 32 Module nvSRAM 3.3V High Speed SRAM with Non-Volatile Storage
Fabricantes	Austin Semiconductor
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No Preview Available ! AUSTIN SEMADICVOANNCDEUCINTFOORR,MINATCI.ON nvSRAM Austin Semiconductor, Inc. AS8nvLC512K32 512K x 32 Module nvSRAM 3.3V High Speed SRAM with Non-Volatile Storage AVAILABLE AS MILITARY SPECIFICATIONS • Military Processing (MIL-STD-883C para 1.2.2) • Temperature Range -55C to 125C FEATURES • -55oC to 125oC Operation • True non-volatile SRAM (no batteries) • 20 ns, 25 ns, and 45 ns access times • Automatic STORE on power down with only a small capacitor • STORE to QuantumTrap® nonvolatile elements initiated by software, device pin, or AutoStore® on power down • RECALL to SRAM initiated by software or power up • Infinite Read, Write, and Recall cycles • 200,000 STORE cycles to QuantumTrap • 20 year data retention • Single 3.3V +/- 0.3V operation • Ceramic Hermetic 68 Quad Flatpak -Can order with X7R CAPS on package -Matches compatible pinout footprint of SRAM & EEPROM Module FUNCTIONAL DESCRIPTION The Austin Semiconductor AS8nvLC512K32 is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits for each of 4 die to form 512Kx32. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control. LOGIC BLOCK DIAGRAM m[1, 2, 3] www.DataSheet4U.com $ $ $ $ $ $ $ $ $ $ $ DQ0-DQ31 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '428 '429 '430 '431 5 2 : ' ( & 2 ' ( 5 , 1 3 8 7 % 8 ) ) ( 5 6 4XDWUXP7UDS ; 4x 6725( 4x 5(&$// 67$7,&5$0 $55$< ; &2/801,2 &2/801'(& $ $ $ $ $ $ $ $ 9&& 9&$3 32:(5 &21752/ 6725(5(&$// &21752/ 62)7:$5( '(7(&7 +6% $$ 2( :( (1-4) &( (1-4) %/( %+( AS8nvLC512K32 Rev. 0.0 08/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 1 page AUSTIN SEMADICVOANNCDEUCINTFOORR,MINATCI.ON nvSRAM Austin Semiconductor, Inc. AS8nvLC512K32 Mode Selection (continued) CE\1Ͳ4 L WE\1Ͳ4 H OE\13 L LHL LHL A15ͲA07 0x4E38 0xB1C7 0x83E0 0x7C1F 0x703F 0x4B46 0x4E38 0xB1C7 0x83E0 0x7C1F 0x703F 0x8FC0 0x4E38 0xB1C7 0x83E0 0x7C1F 0x703F 0x4C63 Mode ReadSRAM ReadSRAM ReadSRAM ReadSRAM ReadSRAM AutoStoreEnable ReadSRAM ReadSRAM ReadSRAM ReadSRAM ReadSRAM NonvolatileStore ReadSRAM ReadSRAM ReadSRAM ReadSRAM ReadSRAM Nonvolatile Recall I/O0Ͳ31 OutputData OutputData OutputData OutputData OutputData OutputData OutputData OutputData OutputData OutputData OutputData OutputHighZ OutputData OutputData OutputData OutputData OutputData OutputHighZ Power Active8 ActiveICC28 Active8 Preventing AutoStore The AutoStore function is disabled by initiating an AutoStore disable sequence. A sequence of read operations is performed in a manner similar to the software STORE initiation. To initiate the AutoStore disable sequence, the following sequence of CE controlled read operations must be performed: 1. Read address 0x4E38 Valid READ www.D2a.taRSehaedeat4dUdr.ceossm0xB1C7 Valid READ 3. Read address 0x83E0 Valid READ 4. Read address 0x7C1F Valid READ 5. Read address 0x703F Valid READ 6. Read address 0x8B45 AutoStore Disable The AutoStore is re-enabled by initiating an AutoStore enable sequence. A sequence of read operations is performed in a manner similar to the software RECALL initiation. To initiate the AutoStore enable sequence, the following sequence of CE controlled read operations must be performed: 1. Read address 0x4E38 Valid READ 2. Read address 0xB1C7 Valid READ 3. Read address 0x83E0 Valid READ 4. Read address 0x7C1F Valid READ 5. Read address 0x703F Valid READ 6. Read address 0x4B46 AutoStore Enable If the AutoStore function is disabled or re-enabled, a manual STORE operation (hardware or software) must be issued to save the AutoStore state through subsequent power down cycles. The part comes from the factory with AutoStore enabled. Data Protection The AS8nvLC512K32 protects data from corruption during low voltage conditions by inhibiting all externally initiated STORE and write operations. The low voltage condition is detected when VCC < VSWITCH. If the AS8nvLC512K32 is in a write mode (both CE and WE are LOW) at power up, after a RECALL or STORE, the write is inhibited until the SRAM is enabled after tLZHSB (HSB to output active). This protects against inadvertent writes during power up or brown out conditions. AS8nvLC512K32 Rev. 0.0 08/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 5 Page AUSTIN SEMADICVOANNCDEUCINTFOORR,MINATCI.ON nvSRAM Austin Semiconductor, Inc. AS8nvLC512K32 Address CE BHE, BLE WE Data Input Data Output SRAM Write Cycle #2: CE\ Controlled3, 16, 17, 18 tWC Address Valid tSA tSCE tHA tBW tPWE tSD tHD Input Data Valid High Impedance www.DataSheet4U.com AS8nvLC512K32 Rev. 0.0 08/09 11 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 Page

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