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PDF IRF6717MPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6717MPBF | |
| Descripción | N-Channel HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97345A
IRF6717MPbF
www.DataSheet4U.com
IRF6717MTRPbF
DirectFET Power MOSFET
l RoHs Compliant and Halgen Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 0.95mΩ@ 10V 1.6mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
46nC 14nC 6.6nC 31nC 35nC 1.8V
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l100% Rg tested
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
MX
MP
DirectFET ISOMETRIC
Description
The IRF6717MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6717MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6717MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6717MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±20
38
30
220
300
290
30
Units
V
A
mJ
A
6
5 ID = 30A
4
3
2 TJ = 125°C
1
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14.0
12.0
10.0
8.0
ID= 30A
VDS= 20V
VDS= 13V
6.0
4.0
2.0
0.0
0
20 40 60 80 100
QG Total Gate Charge (nC)
120
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.64mH, RG = 25Ω, IAS = 30A.
1
04/30/09
1 page  
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1000
100
IRF6717MPbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
TJ = 150°C
1 TJ = 25°C
TJ = -40°C
VGS = 0V
0
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
240
1msec
10
DC 10msec
1
TA = 25°C
TJ = 150°C
Single Pulse
0.1
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
200
2.0
160
ID = 150µA
120 1.5
80
40
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1200
1000
800
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 19A
24A
BOTTOM 30A
600
400
200
www.irf.com
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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