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PDF 1N5804US Data sheet ( Hoja de datos )
| Número de pieza | 1N5804US | |
| Descripción | (1N5802US - 1N5806US) Superfast Recovery Diodes Surface Mount | |
| Fabricantes | Semtech Corporation | |
| Logotipo |  |
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1N5802US/1N5804US/1N5806US
Superfast Recovery Diodes
Surface Mount (US)
POWER DISCRETES
Description
Features
Quick reference data
VIFR
50 -150 V
1N5802US
to
1N5806US
=
2.5A
trr 1N5802US to 1N5806US = 25nS
IR 1N5802US to 1N5806US = 1µA
Electrical Specifications
Very low reverse recovery time
Hermetically sealed non-cavity construction
Soft, non-snap, off recovery characteristics
Very low forward voltage drop
These products are qualified to MIL-PRF-19500/477
and are preferred parts as listed in MIL-HDBK-5961.
They can be supplied fully released as JANTX and
JANTXV versions.
Electrical specifications @ TA = 25°C unless otherwise specified.
Symbol
1N5802US 1N5804US 1N5806US
Units
Working Reverse Voltage
Repetitive Reverse Voltage
Average Forward Current
(@ 75°C lead length = 0.375')
Repetitive Surge Current
(@ 55°C lead length = 0.375')
Non-Repetitive Surge Current
(tp = 8.3mS @ Vr & TJMAX)
Storage Temperature Range
Average Forward Current Max
(pcb mounted: TA = 55°C)
Sine wave
Square wave (d = 0.5)
I2t for fusing (t = 8.3mS) max
Forward Voltage Drop max
@ TJ = 25°C
Reverse Current max
@ VWRM, TJ = 25°C
@ VWRM, TJ = 100°C
Reverse Recovery Time max
(1.0A IF to 1.0A IRM recover to 0.25A IRM(REC))
Junction Capacitance typ
@ VR = 5V f = 1MHz
Thermal Resistance to end cap
VRWM
VRRM
IF(AV)
IFRM
IFSM
TSTG
IF(AV)
IF(AV)
I2t
VF
IR
IR
trr
CJ
R θJEC
50 100 150
50 100 150
2.5
14
35
-65 to +175
1.0
1.1
10
0.875 @ 1A
1.0
50
25
25
13
V
V
A
A
A
°C
A
A2S
V
µA
nS
pF
°C/W
Revision: May 26, 2006
1
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N5804US.PDF ] | |
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