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1N5806U の電気的特性と機能

1N5806UのメーカーはST Microelectronicsです、この部品の機能は「Aerospace 2.5 A fast recovery rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N5806U
部品説明 Aerospace 2.5 A fast recovery rectifier
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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1N5806U Datasheet, 1N5806U PDF,ピン配置, 機能
www.DataSheet4U.com
1N5806U
Aerospace 2.5 A fast recovery rectifier
Features
Aerospace applications
Surface mount hermetic package
High thermal conductivity materials
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop
Package weight: 0.12 g
Target radiation qualification
– 150 krad (Si) low dose rate
– 3 Mrad (Si) high dose rate
Under ESCC qualification
AK
K
A
LCC2A
Description
This power ultrafast recovery rectifier is designed
and packaged to comply with the ESCC5000
specification for aerospace products. It is housed
in a surface mount hermetically sealed LCC2A
package whose footprint is 100% compatible with
industry standard solutions in D5A.
The 1N5806U is suitable for switching mode
power supplies and high frequency DC to DC
converters such as low voltage high frequency
inverter, free wheeling or polarity protection.
Table 1. Device summary(1)
Order code
ESCC detailed
specification
Quality level
Lead finish
EPPL
IF(AV)
VRRM Tj(max) VF (max)
1N5806UA1
-
Engineering
model
Gold plated
-
1N5806U01A 5101/014/13 Flight part Gold plated Y 2.5 A 150 V 175 °C
1N5806U02A 5101/014/14 Flight part
Solder dip
Y
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
1.0 V
July 2009
Doc ID 15986 Rev 1
1/7
www.st.com
7

1 Page





1N5806U pdf, ピン配列
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Characteristics
Table 5.
Symbol
Dynamic characteristics
Parameter
Test conditions
tRR Reverse recovery time
IF = IR = 0.5 A, Irr = 0.05 A, dI/dt = -65 A/µs
(min.)
IF = 1 A, VR = 30 V, dI/dt = -50 A/µs,
VFP Forward recovery voltage IFM = 250 mA
tFR Forward recovery time
IFM = 250 mA, VRF = 1.1 x VF
Cj Diode capacitance
VR = 10 V, F = 1 MHz
Min. Typ. Max. Unit
- - 25
ns
- - 30
- - 2.2 V
- - 15 ns
- - 25 pF
Figure 1.
IFM(A)
10
Forward voltage drop versus
forward current (typical values)
Figure 2. Forward voltage drop versus
forward current (maximum values)
IFM(A)
10
88
66
4 Tj=125 °C
2
Tj=25 °C
Tj=-65 °C
VFM(V)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
4 Tj=125 °C
2
Tj=25 °C
Tj=-65 °C
VFM(V)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Figure 3.
Reverse leakage current versus
reverse voltage applied
(typical values)
IR(µA)
1.E+01
1.E+00
Tj=125 °C
1.E-01
1.E-02
1.E-03
1.E-04
0
Tj=75 °C
Tj=25 °C
VR(V)
20 40 60 80 100 120 140 160
Figure 4.
Relative variation of thermal
impedance, junction to case,
versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Single pulse
0.3
0.2
0.1
0.0
1.E-06
1.E-05
1.E-04
LCC2A
tP(s)
1.E-03
1.E-02
1.E-01
1.E+00
Doc ID 15986 Rev 1
3/7


3Pages


1N5806U 電子部品, 半導体
www.DataSOhredete4rUi.ncogminformation
1N5806U
3 Ordering information
Table 7. Ordering information(1)
Order code
ESCC detailed
specification
Package
Lead finish Marking EPPL Weight Packing
1N5806UA1
1N5806U01A
1N5806U02A
-
5101/014/13
5101/014/14
LCC2A
Gold plated
Gold plated
Solder dip
06UA1
06U01A
06U02A
-
Y
Y
0.12 g
0.12 g
Waffle
pack
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q
versions.
4 Revision history
Table 8. Document revision history
Date
Revision
27-Jul-2009
1 First issue.
Changes
6/7 Doc ID 15986 Rev 1

6 Page



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