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1N5822U の電気的特性と機能

1N5822UのメーカーはST Microelectronicsです、この部品の機能は「Aerospace 40 V power Schottky rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N5822U
部品説明 Aerospace 40 V power Schottky rectifier
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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1N5822U Datasheet, 1N5822U PDF,ピン配置, 機能
www.DataSheet4U.com
1N5822U
Aerospace 40 V power Schottky rectifier
Features
Aerospace applications
Surface mount hermetic package
High thermal conductivity materials
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop
Supplied against an ST detailed procurement
specification
Package weight: 0.18 g
Target radiation qualification
– 150 krad (Si) low dose rate
– 3 Mrad (Si) high dose rate
Under ESCC qualification
AK
K
A
LCC2B
Description
This power Schottky rectifier is designed and
packaged to comply with the ESCC5000
specification for aerospace products. It is housed
in a surface mount hermetically sealed LCC2B
package whose footprint is 100% compatible with
industry standard solutions in D5B.
The 1N5822U is suitable for switching mode
power supplies and high frequency DC to DC
converters such as low voltage high frequency
inverter, free wheeling or polarity protection.
Table 1. Device summary(1)
Order code
ESCC detailed
specification
Quality level
Lead finish
EPPL
IF(AV)
VRRM Tj(max) VF (max)
1N5822UB1
1N5822U01B
1N5822U02B
-
TBD(2)
TBD(2)
Engineering
model
Flight part
Flight part
Gold plated
Gold plated
Solder dip
-
Y
Y
3 A 40 V 150 °C 0.47 V
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
2. TBD: to be defined upon ESCC qualification
August 2009
Doc ID 16007 Rev 1
1/7
www.st.com
7

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1N5822U pdf, ピン配列
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Characteristics
Figure 1. Average forward power dissipation Figure 2. Average forward current versus
versus average forward current
ambient temperature (δ = 0.5)
PF(av)(W)
2.4
2.2
δ=0.05
δ=0.1
d=0.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2 IF(av) (A)
0.0
0.0 0.5 1.0 1.5 2.0 2.5
δ=0.5
δ=1
T
δ=tp/T
3.0 3.5
tp
4.0
IF(av)(A)
3.5
3.0
2.5
2.0
1.5
1.0 T
0.5
δ=tp/T
tp
0.0
0
25
Rth(j-a)=Rth(j-c)
Rth(j-a)=120 °C/W
Tamb(°C)
50 75 100
125
150
Figure 3.
IM(A)
50
45
40
35
30
25
20
15
10
IM
5
0
1.E-03
Non repetitive surge peak forward Figure 4.
current versus overload duration
(maximum values)
Relative variation of thermal
impedance junction to case versus
pulse duration
t
δ =0.5
1.E-02
t(s)
1.E-01
Tc=25 °C
Tc=75 °C
Tc=125 °C
1.E+00
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-04
1.E-03
tp(s)
1.E-02
1.E-01
1.E+00
Figure 5.
Reverse leakage current versus
reverse voltage applied (typical
values)
IR(mA)
1.E+02
Tj=150°C
1.E+01
1.E+00
Tj=125°C
Tj=100°C
Tj=75°C
1.E-01
Tj=50°C
1.E-02
1.E-03
0
Tj=25°C
VR(V)
5 10 15 20 25 30 35 40
Figure 6. Forward voltage drop versus
forward current (typical values)
IFM(A)
10.00
1.00
Tj=125°C
0.10
Tj=25°C
Tj=100°C
VFM(V)
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Doc ID 16007 Rev 1
3/7


3Pages


1N5822U 電子部品, 半導体
www.DataSOhredete4rUi.ncogminformation
1N5822U
3 Ordering information
Table 7. Ordering information(1)
Order code
ESCC detailed
specification
Package
Lead finish
Marking EPPL Weight Packing
1N5822UB1
1N5822U01B
1N5822U02B
-
TBD(2)
TBD(2)
Gold plated 22UB1 - 0.18 g
LCC2B Gold plated 22U01B
Y
Waffle
0.18 g pack
Solder dip 22U02B Y
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q
versions.
2. TBD: to be defined upon ESCC qualification
4 Revision history
Table 8. Document revision history
Date
Revision
10-Aug-2009
1 First issue.
Changes
6/7 Doc ID 16007 Rev 1

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