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1N5819U の電気的特性と機能

1N5819UのメーカーはST Microelectronicsです、この部品の機能は「Aerospace 45V power Schottky rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N5819U
部品説明 Aerospace 45V power Schottky rectifier
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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1N5819U Datasheet, 1N5819U PDF,ピン配置, 機能
www.DataSheet4U.com
1N5819U
Aerospace 45 V power Schottky rectifier
Features
Aerospace applications
Surface mount hermetic package
High thermal conductivity materials
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop
Package weight: 0.18 g
Target radiation qualification
– 150 krad (Si) low dose rate
– 3 Mrad (Si) high dose rate
Under ESCC qualification
AK
K
A
LCC2B
Description
This power Schottky rectifier is designed and
packaged to comply with the ESCC5000
specification for aerospace products. It is housed
in a surface mount hermetically sealed LCC2B
package.
The 1N5819U is suitable for switching mode
power supplies and high frequency DC to DC
converters such as low voltage high frequency
inverter, free wheeling or polarity protection.
Table 1. Device summary(1)
Order code
ESCC detailed
specification
Quality level
Lead finish
EPPL
IF(AV)
VRRM Tj(max) VF (max)
1N5819UB1
-
1N5819U01B 5103/028/04
Engineering
model
Flight part
Gold plated
Gold plated
-
Y
1 A 45 V 150 °C
1N5819U02B 5103/028/05 Flight part
Solder dip
Y
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
0.45 V
August 2009
Doc ID 16006 Rev 1
1/7
www.st.com
7

1 Page





1N5819U pdf, ピン配列
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Characteristics
Table 4.
Symbol
Static electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
Tj = 25 °C
Tj = 100 °C
Tj = -55 °C
Tj = -55 °C
VR = 45 V
VR = 45 V
VR = 40 V
-
-
-
-
IR(1)
Reverse leakage
current
Tj = 25 °C
Tj = 100 °C
Tj = 100 °C
Tj = 100 °C
VR = 40 V
VR = 35 V
VR = 24 V
-
-
-
-
Tj = 100 °C VR = 12 V
Tj = 100 °C VR = 6 V
-
-
Tj = 25 °C IF = 0.1 A
-
VF(2)
Tj = 25 °C
Forward voltage drop Tj = 100 °C IF = 1A
-
-
Tj = - 55 °C
-
Tj = 25 °C IF = 3.1 A
-
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 680 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.285 x IF(AV) + 0.165 IF2(RMS)
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Cj Diode capacitance VR = 5 V, F = 1 MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
20
3.5
20
10
15
3
2.5
1.6
1.2
1
350
490
450
650
800
Max.
70
µA
mA
µA
mA
mV
Unit
pF
Figure 1. Average forward power dissipation Figure 2. Average forward current versus
versus average forward current
ambient temperature (δ = 0.5)
0.9 PF(AV)(W)
IF(AV)(A)
1.2
0.8
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
δ=1
1.0
0.7
R = Rth(j-a)
th(j-c)
0.6 0.8
0.5
0.6
0.4 T
0.3
0.2
0.1
0.0
0.0 0.2 0.4 06
δ=tp / T
tp
IF(AV)(A)
0.8 1.0 1.2 1.4 1.6
0.4 T
0.2 δ=tp / T tp
0.0
0
25
50
Tamb(°C)
75 100 125 150
Doc ID 16006 Rev 1
3/7


3Pages


1N5819U 電子部品, 半導体
www.DataSOhredete4rUi.ncogmInformation
3 Ordering Information
1N5819U
Table 7. Ordering information(1)
Order code
ESCC detailed
specification
Package
Lead finish
Marking EPPL Weight Packing
1N5819UB1
-
Gold plated 19UB1 - 0.18 g
1N5819U01B 5103/028/04
LCC2B Gold plated 19U01B
Y
Waffle
0.18 g pack
1N5819U02B 5103/028/05
Solder dip 19U02B Y
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q
versions.
4 Revision history
Table 8. Document revision history
Date
Revision
10-Aug-2009
1 First issue.
Changes
6/7 Doc ID 16006 Rev 1

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