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G4PF50W の電気的特性と機能

G4PF50WのメーカーはInternational Rectifierです、この部品の機能は「IRG4PF50W」です。


製品の詳細 ( Datasheet PDF )

部品番号 G4PF50W
部品説明 IRG4PF50W
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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G4PF50W Datasheet, G4PF50W PDF,ピン配置, 機能
PD - 91710
IRG4PF50W
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Optimized for use in Welding and Switch-Mode
Power Supply applications
• Industry benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest technology IGBT design offers tighter
parameter distribution coupled with exceptional
reliability
Benefits
• Lower switching losses allow more cost-effective
operation and hence efficient replacement of larger-
die MOSFETs up to 100kHz
• Of particular benefit in single-ended converters and
Power Supplies 150W and higher
• Reduction in critical Eoff parameter due to minimal
minority-carrier recombination coupled with low on-
state losses allow maximum flexibility in device
application
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Œ
Clamped Inductive Load Current 
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy Ž
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
C
G
E
n-channel
VCES = 900V
VCE(on) typ. = 2.25V
@VGE = 15V, IC = 28A
TO-247AC
Max.
900
51
28
204
204
± 20
186
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
1
4/15/98

1 Page





G4PF50W pdf, ピン配列
IRG4PF50W
60
50
40
Square wave:
30 60% of rated
voltage
20
For both:
Duty cycle: 50%
TJ = 125˚C
Tsink= 90˚C
Gate drive as specified
Power Dissipation = 40W
Triangular wave:
Clamp voltage:
80% of rated
10 Ideal diodes
0
0.1
1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
)
100
1000
100
TJ = 25 °C
TJ = 150 °C
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
1000
100
TJ = 150 °C
TJ = 25 °C
10
VCC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


G4PF50W 電子部品, 半導体
IRG4PF50W
12 RG = O5h.0m
T J = 150° C
10
VCC = 720V
VGE = 15V
8
6
4
2
0
0 10 20 30 40 50 60
I C, Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
VGE = 20V
T J = 125 oC
100
10
SAFE OPERATING AREA
1
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
6 www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
G4PF50W

IRG4PF50W

International Rectifier
International Rectifier
G4PF50WD

IRG4PF50WD

International Rectifier
International Rectifier


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