|
|
IRF3711PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF3711PBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF3711PBFダウンロード(pdfファイル)リンクがあります。 Total 12 pages
www.DataSheet4U.com
PD- 94948
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
l Lead-Free
VDSS
20V
IRF3711PbF
IRF3711SPbF
IRF3711LPbF
HEXFET® Power MOSFET
RDS(on) max
6.0mΩ
ID
110A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
TO-220AB
IRF3711PbF
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
D2Pak
TO-262
IRF3711SPbF IRF3711LPbF
Max.
20
± 20
110
69
440
120
3.1
0.96
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
–––
0.50
–––
–––
Max.
1.04
–––
62
40
Units
°C/W
Notes through are on page 11
www.irf.com
1
2/27/04
1 Page www.DataSheet4U.com
IRF3711/S/LPbF
1000
VGS
TOP 15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
100
10
0.1
2.7V
20µs PULSE WIDTH
TJ= 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
VGS
TOP 15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
100
2.7V
10
0.1
20µs PULSE WIDTH
TJ= 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 150° C
10
2.0
V DS= 25V
20µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0 8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = 110A
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages www.DataSheet4U.com
IRF3711/S/LPbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
1400
1200
1000
800
600
400
TOP
BOTTOM
ID
13A
19A
30A
V(BR)DSS
tp
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
IAS
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com
6 Page | |||
ページ | 合計 : 12 ページ | ||
|
PDF ダウンロード | [ IRF3711PBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF3711PBF | HEXFET Power MOSFET | International Rectifier |