DataSheet.jp

STP140N10F4 の電気的特性と機能

STP140N10F4のメーカーはSTMicroelectronicsです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP140N10F4
部品説明 Power MOSFET ( Transistor )
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




このページの下部にプレビューとSTP140N10F4ダウンロード(pdfファイル)リンクがあります。

Total 13 pages

No Preview Available !

STP140N10F4 Datasheet, STP140N10F4 PDF,ピン配置, 機能
www.DataSheet4U.com
STB140N10F4, STF140N10F4
STP140N10F4
N-channel 100 V, 5.2 m, 60 A TO-220, D2PAK, TO-220FP
STripFET™ DeepGATE™ Power MOSFET
Preliminary Data
Features
Type
STB140N10F4
STF140N10F4
STP140N10F4
VDSS
100 V
100 V
100 V
RDS(on) max
< 6.5 m
< 6.5 m
< 6.5 m
ID
140 A
55 A
140 A
Exceptional dv/dt capability
Extremely low on-resistance RDS(on)
100% avalanche tested
Application
Switching applications
Description
This Power MOSFET is among the latest
developments that use an advanced technology
(STripFET™ DeepGATE™ technology), which
has been especially tailored to minimize on-state
resistance, provide superior switching
performance and withstand high energy pulse in
avalanche and commutation mode. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
3
2
1
TO-220FP
3
2
1
TO-220
3
1
D²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB140N10F4
STF140N10F4
STP140N10F4
Marking
140N10F4
140N10F4
140N10F4
Package
D²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
January 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
13

1 Page





STP140N10F4 pdf, ピン配列
www.DataSShTeeBt41U4.0coNm10F4, STF140N10F4, STP140N10F4
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate- source voltage
ID Drain current (continuous) at TC = 25 °C
ID
IDM (1)
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
EAS (2) Single pulse avalanche energy
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area
2. Starting Tj = 25 °C, ID= 32.5 A, VDD= 45 V
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb Thermal resistance junction-pcb max
Rthj-a Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
1. When mounted on FR-4 board of 1 inch², 2 oz Cu
Value
TO-220, D²PAK TO-220FP
100
± 20
140 55
100 38
560 220
300 48
2 0.32
TBD
Unit
V
V
A
A
A
W
W/°C
mJ
– 55 to 175
°C
Value
TO-220, D²PAK TO-220FP
Unit
0.5
-- 35(1)
62.5 --
3.1 °C/W
--
62.5 °C/W
300 --
300 °C
3/13


3Pages


STP140N10F4 電子部品, 半導体
www.DataSTheesett4cUi.rccomuit
3 Test circuit
STB140N10F4, STF140N10F4, STP140N10F4
Figure 2. Switching times test circuit for
resistive load
Figure 3. Gate charge test circuit
Figure 4. Test circuit for inductive load
Figure 5. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform
6/13

6 Page



ページ 合計 : 13 ページ
 
PDF
ダウンロード
[ STP140N10F4 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
STP140N10F4

Power MOSFET ( Transistor )

STMicroelectronics
STMicroelectronics


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap