DataSheet.es    


PDF STK32N4LLH5 Data sheet ( Hoja de datos )

Número de pieza STK32N4LLH5
Descripción Power MOSFET ( Transistor )
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



Hay una vista previa y un enlace de descarga de STK32N4LLH5 (archivo pdf) en la parte inferior de esta página.


Total 13 Páginas

No Preview Available ! STK32N4LLH5 Hoja de datos, Descripción, Manual

www.DataSheet4U.com
Features
STK32N4LLH5
N-channel 40 V, 0.0017 , 32 A, PolarPAK®
STripFET™ V Power MOSFET
Preliminary Data
Type
VDSS RDS(on) max RDS(on)*Qg
STK32N4LLH5 40 V < 0.0025 106.4nC*m
Ultra low top and bottom junction to case
thermal resistance
Extremely low on-resistance RDS(on)
RDS(on)*Qg industry benchmark
High avalanche ruggedness
Fully encapsulated die
100% Matte tin finish (in compliance with the
2002/95/EC european directive)
PolarPAK® is a trademark of VISHAY
Application
Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
PolarPAK®
Figure 1. Internal schematic diagram
Bottom View
Top View
Table 1. Device summary
Order code
STK32N4LLH5
Marking
324L5
Package
PolarPAK®
Packaging
Tape and reel
September 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
13

1 page




STK32N4LLH5 pdf
www.DataSShTeeKt43U2.Nco4mLLH5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 15 V, ID= 16 A,
RG=4.7 Ω, VGS=4.5 V
(see Figure 2)
Min. Typ. Max. Unit
TBD
TBD
ns
ns
TBD
TBD
ns
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2) Forward on voltage
ISD= 16 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 32 A, di/dt = 100 A/µs,
VDD=20 V, TJ=150°C
(see Figure 7)
1. Pulse width limited by package
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
32 A
128 A
1.1 V
TBD
TBD
TBD
ns
nC
A
5/13

5 Page





STK32N4LLH5 arduino
www.DataSShTeeKt43U2.Nco4mLLH5
Figure 10. Recommended PAD layout
Package mechanical data
11/13

11 Page







PáginasTotal 13 Páginas
PDF Descargar[ Datasheet STK32N4LLH5.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
STK32N4LLH5Power MOSFET ( Transistor )STMicroelectronics
STMicroelectronics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar