|
|
PDF EIC1213-12 Data sheet ( Hoja de datos )
| Número de pieza | EIC1213-12 | |
| Descripción | 12.75-13.25 GHz 12-Watt Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EIC1213-12 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
ISSUED 3-19-09
EIC1213-12
12.75-13.25 GHz 12-Watt Internally Matched Power FET
FEATURES
• 12.75– 13.25 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +41 dBm Output Power at 1dB Compression
• 6 dB Power Gain at 1dB Compression
• 25% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.827±.010 .669
Excelics
EIC1213-12
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN TYP
P1dB
G1dB
∆G
IMD3
PAE
Output Power at 1dB Compression
f = 12.75-13.25GHz
VDS = 10 V, IDSQ ≈ 3700mA
Gain at 1dB Compression
f = 12.75-13.25GHz
VDS = 10 V, IDSQ ≈ 3700mA
Gain Flatness
f = 12.75-13.25GHz
VDS = 10 V, IDSQ ≈3700mA
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 30.0 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 13.25 GHz
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 3700mA
f = 12.75-13.25GHz
40.5
5
-41
41
6
-45
25
Id1dB
Drain Current at 1dB Compression
f = 12.75-13.25GHz
3800
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
8
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 75 mA
-2.5
1.8
Note: 1) Tested with 30 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
3) Overall Rth depends on case mounting.
MAX
±0.6
4300
10
-4.0
2.1
UNITS
dBm
dB
dB
dBc
%
mA
A
V
oC/W
MAXIMUM RATING AT 25°C1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
15
-5
37.5dBm
175 oC
-65 to +175 oC
71.5W
10V
-4V
@ 3dB Compression
175 oC
-65 to +175 oC
71.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revision A1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet EIC1213-12.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EIC1213-12 | 12.75-13.25 GHz 12-Watt Internally Matched Power FET | Excelics Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |